Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors
A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor （HEMT） is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the g...
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| Veröffentlicht in: | Chinese physics letters 2010, Vol.27 (8), p.183-185 |
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| container_title | Chinese physics letters |
| container_volume | 27 |
| creator | 胡贵州 杨凌 杨丽媛 全思 姜守高 马骥刚 马晓华 郝跃 |
| description | A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor （HEMT） is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively. |
| doi_str_mv | 10.1088/0256-307X/27/8/087301 |
| format | Article |
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The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively.</description><identifier>ISSN: 0256-307X</identifier><identifier>EISSN: 1741-3540</identifier><identifier>DOI: 10.1088/0256-307X/27/8/087301</identifier><language>eng</language><subject>HEMT器件 ; 最高振荡频率 ; 氮化铝 ; 氮化镓 ; 结构化 ; 阈值电压漂移 ; 高电子迁移率晶体管</subject><ispartof>Chinese physics letters, 2010, Vol.27 (8), p.183-185</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84212X/84212X.jpg</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>胡贵州 杨凌 杨丽媛 全思 姜守高 马骥刚 马晓华 郝跃</creatorcontrib><title>Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors</title><title>Chinese physics letters</title><addtitle>Chinese Physics Letters</addtitle><description>A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor （HEMT） is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively.</description><subject>HEMT器件</subject><subject>最高振荡频率</subject><subject>氮化铝</subject><subject>氮化镓</subject><subject>结构化</subject><subject>阈值电压漂移</subject><subject>高电子迁移率晶体管</subject><issn>0256-307X</issn><issn>1741-3540</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo9jkFLwzAYhoMoWKc_QSjeY7-vSZv0OMbchG0e3EFPI0nTNRpaTLLD_r2FiYeXlxceHl5CHhGeEaQsoKxqykB8FKUopikFA7wiGQqOlFUcrkn2z9ySuxi_ABAlYkY-F70KyiQbXEzOxNwN-dzvirlfqV0xJd-efHJenW2g7ymcTDoF2-Zrd-zp0luTwjjQ7aidd-mc74Ma4mQaQ7wnN53y0T789YzsX5b7xZpu3lavi_mGmkYkKkBaxhspNAcwaAFUo-tq-mZki6i5qipemRplaTSvoeWSo5ZN2xnQCgWbkaeL1vTjcPxxw_GglfnunLcHxusGJavZLyFTU_k</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>胡贵州 杨凌 杨丽媛 全思 姜守高 马骥刚 马晓华 郝跃</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2010</creationdate><title>Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors</title><author>胡贵州 杨凌 杨丽媛 全思 姜守高 马骥刚 马晓华 郝跃</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c97t-708e34987b400c1e00a9b65811c8d11b4a5545c6182cb460d4841b89dfc0ba173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>HEMT器件</topic><topic>最高振荡频率</topic><topic>氮化铝</topic><topic>氮化镓</topic><topic>结构化</topic><topic>阈值电压漂移</topic><topic>高电子迁移率晶体管</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>胡贵州 杨凌 杨丽媛 全思 姜守高 马骥刚 马晓华 郝跃</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>Chinese physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>胡贵州 杨凌 杨丽媛 全思 姜守高 马骥刚 马晓华 郝跃</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors</atitle><jtitle>Chinese physics letters</jtitle><addtitle>Chinese Physics Letters</addtitle><date>2010</date><risdate>2010</risdate><volume>27</volume><issue>8</issue><spage>183</spage><epage>185</epage><pages>183-185</pages><issn>0256-307X</issn><eissn>1741-3540</eissn><abstract>A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor （HEMT） is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively.</abstract><doi>10.1088/0256-307X/27/8/087301</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Chinese physics letters, 2010, Vol.27 (8), p.183-185 |
| issn | 0256-307X 1741-3540 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | HEMT器件 最高振荡频率 氮化铝 氮化镓 结构化 阈值电压漂移 高电子迁移率晶体管 |
| title | Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors |
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