High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

We report an AIN epi-layer grown on sapphire by plasma-assisted molecular beam epitaxy with a thin interlayer structure. The effects of growth mode on threading dislocations （TDs） and surface morphology are studied. Then an interlayer structure grown under a V/Ⅲ ratio of 1 is adopted to improve the...

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Veröffentlicht in:Chinese physics letters 2010-06, Vol.27 (6), p.233-236
Hauptverfasser: Fan, Ren, Zhi-Biao, Hao, Chen, Zhang, Jian-Nan, Hu, Yi, Luo
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Sprache:eng
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AIN
夹层结构
等离子体辅助分子束外延
蓝宝石衬底
薄夹层
表面粗糙度
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container_issue 6
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container_title Chinese physics letters
container_volume 27
creator Fan, Ren
Zhi-Biao, Hao
Chen, Zhang
Jian-Nan, Hu
Yi, Luo
description We report an AIN epi-layer grown on sapphire by plasma-assisted molecular beam epitaxy with a thin interlayer structure. The effects of growth mode on threading dislocations （TDs） and surface morphology are studied. Then an interlayer structure grown under a V/Ⅲ ratio of 1 is adopted to improve the AIN crystalline quality. By optimizing the thickness of the interlayer, the TD density and surface roughness can be reduced simultaneously.
doi_str_mv 10.1088/0256-307X/27/6/068101
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subjects AIN
夹层结构
等离子体辅助分子束外延
蓝宝石衬底
薄夹层
表面粗糙度
title High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
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