Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Resonant-cavity light-emitting diodes （RCLED） at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an A1GalnP material system has been chosen to grow the top DBRs. The emission properties of the RCLED wer...

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Veröffentlicht in:Journal of semiconductors 2009-05, Vol.30 (5), p.47-49
1. Verfasser: 康玉柱 李建军 丁亮 杨臻 韩军 邓军 邹德恕 沈光地
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Sprache:eng
Schlagworte:
发光二极管
发射功率
排放性能
教材体系
电致发光光谱
纳米
谐振腔
金属有机化学气相沉积
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container_end_page 49
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container_title Journal of semiconductors
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creator 康玉柱 李建军 丁亮 杨臻 韩军 邓军 邹德恕 沈光地
description Resonant-cavity light-emitting diodes （RCLED） at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an A1GalnP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full .width at half maximum is about 10 nm.
doi_str_mv 10.1088/1674-4926/30/5/054005
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subjects 发光二极管
发射功率
排放性能
教材体系
电致发光光谱
纳米
谐振腔
金属有机化学气相沉积
title Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm
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