Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an A1GalnP material system has been chosen to grow the top DBRs. The emission properties of the RCLED wer...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of semiconductors 2009-05, Vol.30 (5), p.47-49
1. Verfasser: 康玉柱 李建军 丁亮 杨臻 韩军 邓军 邹德恕 沈光地
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an A1GalnP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full .width at half maximum is about 10 nm.
ISSN:1674-4926
DOI:10.1088/1674-4926/30/5/054005