Fabrication of pentacene organic field-effect transistors With polyimide gate dielectric layer

Fabrication of pentacene organic field-effect transistors With polyimide gate dielectric layer

The organic tield effect transistors had been fabricated using the pentacene by vacuum evaporation as the active layer, the polyimide by spin coating as insulator layer, and aluminum by vacuum evaporation as gate, source and drain electrodes respectively. The field-effect mobility of 0.079 cm^2/V.s...

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Veröffentlicht in:光电子快报：英文版 2007, Vol.3 (6), p.432-434
1. Verfasser: DONG Mao-jun TAO Chun-lan ZHANG Xu-hui OU Gu-plng ZHANG Fu-jia
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Sprache:eng
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化合物晶体
晶体管
绝缘栅
聚酰亚胺
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creator DONG Mao-jun TAO Chun-lan ZHANG Xu-hui OU Gu-plng ZHANG Fu-jia
description The organic tield effect transistors had been fabricated using the pentacene by vacuum evaporation as the active layer, the polyimide by spin coating as insulator layer, and aluminum by vacuum evaporation as gate, source and drain electrodes respectively. The field-effect mobility of 0.079 cm^2/V.s was tested at V.=70 V, and on/off radio up to 1.7×10^4.
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subjects 化合物晶体
晶体管
绝缘栅
聚酰亚胺
title Fabrication of pentacene organic field-effect transistors With polyimide gate dielectric layer
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