Vacuum distillation refining of metallurgical grade silicon (Ⅰ) ---Thermodynamics on removal of phosphorus from metallurgical grade silicon

The removal of impurity phosphorus from metallurgical grade silicon is one of the major problems on purification of metallurgical grade silicon for solar grade silicon preparation. The thermodynamics on vacuum refining process of the metallurgical grade silicon was studied via separation coefficient...

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Veröffentlicht in:Transactions of Nonferrous Metals Society of China 2007, Vol.17 (A02), p.1022-1025
1. Verfasser: 魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福
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container_title Transactions of Nonferrous Metals Society of China
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creator 魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福
description The removal of impurity phosphorus from metallurgical grade silicon is one of the major problems on purification of metallurgical grade silicon for solar grade silicon preparation. The thermodynamics on vacuum refining process of the metallurgical grade silicon was studied via separation coefficient of impurity phosphorus in the metallurgical grade silicon and vapor-liquid equilibrium composition diagram of Si-P binary alloy at different temperatures. The behaviors of impurity phosphorus in the vacuum distillation process were examined. The results show that the vacuum distillation should be taken to obtain silicon with less than 10^-7 P, and the impurity phosphorus is volatilized easily by vacuum distillation in thermodynamics. Phosphorus is distilled from the molten silicon and concentrated in vapor phase.
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fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_backfile_25959329</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>25959329</cqvip_id><sourcerecordid>25959329</sourcerecordid><originalsourceid>FETCH-chongqing_backfile_259593293</originalsourceid><addsrcrecordid>eNqNjksKwjAURTNQ8LuHh_NAbWuhY1FcgDiVmCbt03w0aQUXIOjQHbgQV-MG3IJBHIuDy52ce7gt0h1HUUKzJM46pOf9NorSNMvGXXJbMd40Ggr0NSrFarQGnJBo0JRgJWhRM6UaVyJnCkrHCgEeFfLAvR6X5_n-elyBUrqshNO2OBmmkXv4aLQ9hlGw7CvrQ1zjQTqrf1kHpC2Z8mL47T4ZzWfL6YLyypryEG6tN4zvJCqxjif5JE_iPPkLegOOc1nZ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Vacuum distillation refining of metallurgical grade silicon (Ⅰ) ---Thermodynamics on removal of phosphorus from metallurgical grade silicon</title><source>ScienceDirect Journals (5 years ago - present)</source><source>Alma/SFX Local Collection</source><creator>魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福</creator><creatorcontrib>魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福</creatorcontrib><description>The removal of impurity phosphorus from metallurgical grade silicon is one of the major problems on purification of metallurgical grade silicon for solar grade silicon preparation. The thermodynamics on vacuum refining process of the metallurgical grade silicon was studied via separation coefficient of impurity phosphorus in the metallurgical grade silicon and vapor-liquid equilibrium composition diagram of Si-P binary alloy at different temperatures. The behaviors of impurity phosphorus in the vacuum distillation process were examined. The results show that the vacuum distillation should be taken to obtain silicon with less than 10^-7 P, and the impurity phosphorus is volatilized easily by vacuum distillation in thermodynamics. Phosphorus is distilled from the molten silicon and concentrated in vapor phase.</description><identifier>ISSN: 1003-6326</identifier><language>eng</language><subject>冶金学 ; 热力学 ; 真空蒸馏精炼</subject><ispartof>Transactions of Nonferrous Metals Society of China, 2007, Vol.17 (A02), p.1022-1025</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85276X/85276X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福</creatorcontrib><title>Vacuum distillation refining of metallurgical grade silicon (Ⅰ) ---Thermodynamics on removal of phosphorus from metallurgical grade silicon</title><title>Transactions of Nonferrous Metals Society of China</title><addtitle>Transactions of Nonferrous Metals Society of China</addtitle><description>The removal of impurity phosphorus from metallurgical grade silicon is one of the major problems on purification of metallurgical grade silicon for solar grade silicon preparation. The thermodynamics on vacuum refining process of the metallurgical grade silicon was studied via separation coefficient of impurity phosphorus in the metallurgical grade silicon and vapor-liquid equilibrium composition diagram of Si-P binary alloy at different temperatures. The behaviors of impurity phosphorus in the vacuum distillation process were examined. The results show that the vacuum distillation should be taken to obtain silicon with less than 10^-7 P, and the impurity phosphorus is volatilized easily by vacuum distillation in thermodynamics. Phosphorus is distilled from the molten silicon and concentrated in vapor phase.</description><subject>冶金学</subject><subject>热力学</subject><subject>真空蒸馏精炼</subject><issn>1003-6326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqNjksKwjAURTNQ8LuHh_NAbWuhY1FcgDiVmCbt03w0aQUXIOjQHbgQV-MG3IJBHIuDy52ce7gt0h1HUUKzJM46pOf9NorSNMvGXXJbMd40Ggr0NSrFarQGnJBo0JRgJWhRM6UaVyJnCkrHCgEeFfLAvR6X5_n-elyBUrqshNO2OBmmkXv4aLQ9hlGw7CvrQ1zjQTqrf1kHpC2Z8mL47T4ZzWfL6YLyypryEG6tN4zvJCqxjif5JE_iPPkLegOOc1nZ</recordid><startdate>2007</startdate><enddate>2007</enddate><creator>魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2007</creationdate><title>Vacuum distillation refining of metallurgical grade silicon (Ⅰ) ---Thermodynamics on removal of phosphorus from metallurgical grade silicon</title><author>魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_backfile_259593293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>冶金学</topic><topic>热力学</topic><topic>真空蒸馏精炼</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>Transactions of Nonferrous Metals Society of China</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vacuum distillation refining of metallurgical grade silicon (Ⅰ) ---Thermodynamics on removal of phosphorus from metallurgical grade silicon</atitle><jtitle>Transactions of Nonferrous Metals Society of China</jtitle><addtitle>Transactions of Nonferrous Metals Society of China</addtitle><date>2007</date><risdate>2007</risdate><volume>17</volume><issue>A02</issue><spage>1022</spage><epage>1025</epage><pages>1022-1025</pages><issn>1003-6326</issn><abstract>The removal of impurity phosphorus from metallurgical grade silicon is one of the major problems on purification of metallurgical grade silicon for solar grade silicon preparation. The thermodynamics on vacuum refining process of the metallurgical grade silicon was studied via separation coefficient of impurity phosphorus in the metallurgical grade silicon and vapor-liquid equilibrium composition diagram of Si-P binary alloy at different temperatures. The behaviors of impurity phosphorus in the vacuum distillation process were examined. The results show that the vacuum distillation should be taken to obtain silicon with less than 10^-7 P, and the impurity phosphorus is volatilized easily by vacuum distillation in thermodynamics. Phosphorus is distilled from the molten silicon and concentrated in vapor phase.</abstract></addata></record>
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source ScienceDirect Journals (5 years ago - present); Alma/SFX Local Collection
subjects 冶金学
热力学
真空蒸馏精炼
title Vacuum distillation refining of metallurgical grade silicon (Ⅰ) ---Thermodynamics on removal of phosphorus from metallurgical grade silicon
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T01%3A15%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Vacuum%20distillation%20refining%20of%20metallurgical%20grade%20silicon%20%EF%BC%88%E2%85%A0%EF%BC%89%20---Thermodynamics%20on%20removal%20of%20phosphorus%20from%20metallurgical%20grade%20silicon&rft.jtitle=Transactions%20of%20Nonferrous%20Metals%20Society%20of%20China&rft.au=%E9%AD%8F%E5%A5%8E%E5%85%88%20%E9%A9%AC%E6%96%87%E4%BC%9A%20%E6%88%B4%E6%B0%B8%E5%B9%B4%20%E6%9D%A8%E6%96%8C%20%E5%88%98%E5%A4%A7%E6%98%A5%20%E6%B1%AA%E9%95%9C%E7%A6%8F&rft.date=2007&rft.volume=17&rft.issue=A02&rft.spage=1022&rft.epage=1025&rft.pages=1022-1025&rft.issn=1003-6326&rft_id=info:doi/&rft_dat=%3Cchongqing%3E25959329%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=25959329&rfr_iscdi=true