Stability of thin films of microcrystalline silicon under light soaking

Stability of thin films of microcrystalline silicon under light soaking

Silicon thin films with different crystalline ratio（Xc） have been deposited by varying silane content（SC） of reactive gases in the RF-PECVD process. The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied b...

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Veröffentlicht in:光电子快报：英文版 2006, Vol.2 (1), p.15-17
1. Verfasser: HAN Xiao-yan Wang Yan XUE Jun-ming ZHAO Shu-wen REN Hui-zhi ZHAO Ying LI Yang-xian GENG Xin-hua
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微晶硅
微观结构
稳定性
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description Silicon thin films with different crystalline ratio（Xc） have been deposited by varying silane content（SC） of reactive gases in the RF-PECVD process. The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements, photoconductivity（σph ）, and dark conductivity（ σd ）, followed by the measurements of light absorption coefficient（α）, the product of quantum efficiency, mobility and lifetime （ημτ）, before, during and after light soaking, respectively, The results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.
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subjects 微晶硅
微观结构
稳定性
title Stability of thin films of microcrystalline silicon under light soaking
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