Strain-Engineered MOSFETs

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their f...

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Hauptverfasser:	Maiti, C. K, Maiti, T. K
Format:	Buch
Sprache:	eng
Schlagworte:	Agriculture Electrical Engineering Electronics Electronics and communications engineering Electronics engineering Engineering Fault tolerance Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering Integrated circuits Metal oxide semiconductor field-effect transistors Microelectronics Military & nautical engineering Reliability Strains and stresses TECHNOLOGY & ENGINEERING Technology, Engineering, Agriculture, Industrial processes thema EDItEUR thema EDItEUR::T Technology
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Beschreibung
Zusammenfassung:	This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
DOI:	10.1201/9781315216577