Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs

This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method, including electron-electron and electron-LO phonon scatteri...

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description This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method, including electron-electron and electron-LO phonon scattering dynamically screened in the random-phase-approximation (RPA). The LO phonon self-energy is treated in the plasmon-pole approximation. Scattering from ionized impurities screened in static RPA is calculated with phase-shift cross sections, and scattering from RPA screened deformation potential and piezoelectric acoustic phonons is included in the elastic approximation. The results show that dynamic screening and plasmon-phonon coupling significantly modify inelastic scattering at low temperatures and densities. The effect on mobility is obscured by ionized impurity scattering in conventionally doped material, but should be important in modulation doped structures. For uncompensated bulk n-type GaAs, the RPA phase-shift model for electron-impurity scattering gives lower drift mobilities than the standard Thomas-Fermi or Born calculations which are high compared to experiment. Electron-electron scattering lowers the mobility further, giving improved agreement with experiment though discrepancies persist at high donor concentrations ($n>10^{18}{\rm cm}^{-3}$). When impurities are ignored, inelastic scattering from the coupled electron-phonon system is the strongest scattering mechanism at 77 K for moderate doping. This result differs from the standard model neglecting mode coupling and electron-electron scattering which has the acoustic modes dominant in this regime.
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A</creatorcontrib><description>This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method, including electron-electron and electron-LO phonon scattering dynamically screened in the random-phase-approximation (RPA). The LO phonon self-energy is treated in the plasmon-pole approximation. Scattering from ionized impurities screened in static RPA is calculated with phase-shift cross sections, and scattering from RPA screened deformation potential and piezoelectric acoustic phonons is included in the elastic approximation. The results show that dynamic screening and plasmon-phonon coupling significantly modify inelastic scattering at low temperatures and densities. The effect on mobility is obscured by ionized impurity scattering in conventionally doped material, but should be important in modulation doped structures. For uncompensated bulk n-type GaAs, the RPA phase-shift model for electron-impurity scattering gives lower drift mobilities than the standard Thomas-Fermi or Born calculations which are high compared to experiment. Electron-electron scattering lowers the mobility further, giving improved agreement with experiment though discrepancies persist at high donor concentrations ($n&gt;10^{18}{\rm cm}^{-3}$). When impurities are ignored, inelastic scattering from the coupled electron-phonon system is the strongest scattering mechanism at 77 K for moderate doping. This result differs from the standard model neglecting mode coupling and electron-electron scattering which has the acoustic modes dominant in this regime.</description><identifier>DOI: 10.48550/arxiv.cond-mat/9501084</identifier><language>eng</language><subject>Physics - Disordered Systems and Neural Networks ; Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics ; Physics - Other Condensed Matter ; Physics - Quantum Gases ; Physics - Soft Condensed Matter ; Physics - Statistical Mechanics ; Physics - Strongly Correlated Electrons ; Physics - Superconductivity</subject><creationdate>1995-01</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/cond-mat/9501084$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.51.14256$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.cond-mat/9501084$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Sanborn, B. A</creatorcontrib><title>Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs</title><description>This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method, including electron-electron and electron-LO phonon scattering dynamically screened in the random-phase-approximation (RPA). The LO phonon self-energy is treated in the plasmon-pole approximation. Scattering from ionized impurities screened in static RPA is calculated with phase-shift cross sections, and scattering from RPA screened deformation potential and piezoelectric acoustic phonons is included in the elastic approximation. The results show that dynamic screening and plasmon-phonon coupling significantly modify inelastic scattering at low temperatures and densities. The effect on mobility is obscured by ionized impurity scattering in conventionally doped material, but should be important in modulation doped structures. For uncompensated bulk n-type GaAs, the RPA phase-shift model for electron-impurity scattering gives lower drift mobilities than the standard Thomas-Fermi or Born calculations which are high compared to experiment. Electron-electron scattering lowers the mobility further, giving improved agreement with experiment though discrepancies persist at high donor concentrations ($n&gt;10^{18}{\rm cm}^{-3}$). When impurities are ignored, inelastic scattering from the coupled electron-phonon system is the strongest scattering mechanism at 77 K for moderate doping. This result differs from the standard model neglecting mode coupling and electron-electron scattering which has the acoustic modes dominant in this regime.</description><subject>Physics - Disordered Systems and Neural Networks</subject><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Physics - Other Condensed Matter</subject><subject>Physics - Quantum Gases</subject><subject>Physics - Soft Condensed Matter</subject><subject>Physics - Statistical Mechanics</subject><subject>Physics - Strongly Correlated Electrons</subject><subject>Physics - Superconductivity</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNqNjj0KAjEUhNNYiHoG09iZ3Yi7sJYiqx7Axio8kycG8kcSxb29UfYAVjMw38BHyHLDq6ZrW15DfOtXJb1TzEKudy3f8K6ZkmtvUOboHcOxUO0yRpBZe5fWVPpnMKhoMJBswcLDuwJZr7Cs4FSpN210HsqROpaHgPQE-zQnkzuYhIsxZ2R17C-HM_upiBC1hTiIr5IoSmJU2v7LfQBW9kin</recordid><startdate>19950118</startdate><enddate>19950118</enddate><creator>Sanborn, B. A</creator><scope>GOX</scope></search><sort><creationdate>19950118</creationdate><title>Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs</title><author>Sanborn, B. A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-arxiv_primary_cond_mat_95010843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Physics - Disordered Systems and Neural Networks</topic><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Physics - Other Condensed Matter</topic><topic>Physics - Quantum Gases</topic><topic>Physics - Soft Condensed Matter</topic><topic>Physics - Statistical Mechanics</topic><topic>Physics - Strongly Correlated Electrons</topic><topic>Physics - Superconductivity</topic><toplevel>online_resources</toplevel><creatorcontrib>Sanborn, B. A</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sanborn, B. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs</atitle><date>1995-01-18</date><risdate>1995</risdate><abstract>This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method, including electron-electron and electron-LO phonon scattering dynamically screened in the random-phase-approximation (RPA). The LO phonon self-energy is treated in the plasmon-pole approximation. Scattering from ionized impurities screened in static RPA is calculated with phase-shift cross sections, and scattering from RPA screened deformation potential and piezoelectric acoustic phonons is included in the elastic approximation. The results show that dynamic screening and plasmon-phonon coupling significantly modify inelastic scattering at low temperatures and densities. The effect on mobility is obscured by ionized impurity scattering in conventionally doped material, but should be important in modulation doped structures. For uncompensated bulk n-type GaAs, the RPA phase-shift model for electron-impurity scattering gives lower drift mobilities than the standard Thomas-Fermi or Born calculations which are high compared to experiment. Electron-electron scattering lowers the mobility further, giving improved agreement with experiment though discrepancies persist at high donor concentrations ($n&gt;10^{18}{\rm cm}^{-3}$). When impurities are ignored, inelastic scattering from the coupled electron-phonon system is the strongest scattering mechanism at 77 K for moderate doping. This result differs from the standard model neglecting mode coupling and electron-electron scattering which has the acoustic modes dominant in this regime.</abstract><doi>10.48550/arxiv.cond-mat/9501084</doi><oa>free_for_read</oa></addata></record>
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subjects Physics - Disordered Systems and Neural Networks
Physics - Materials Science
Physics - Mesoscale and Nanoscale Physics
Physics - Other Condensed Matter
Physics - Quantum Gases
Physics - Soft Condensed Matter
Physics - Statistical Mechanics
Physics - Strongly Correlated Electrons
Physics - Superconductivity
title Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs
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