Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high temperature stripping of the intrinsic silicon sur...

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Hauptverfasser: Kundaliya, Darshan C, Ogale, S. B, Dhar, S, McDonald, K. F, Knoesel, E, Osedach, T, Lofland, S. E, Shinde, S. R, Venkatesan, T
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creator Kundaliya, Darshan C
Ogale, S. B
Dhar, S
McDonald, K. F
Knoesel, E
Osedach, T
Lofland, S. E
Shinde, S. R
Venkatesan, T
description Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (100) substrate. The ferromagnetic transition temperature (TC ~ 215 K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15 degrees in the ferromagnetic state.
doi_str_mv 10.48550/arxiv.cond-mat/0508159
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title Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon
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