Spin relaxation of conduction electrons in bulk III-V semiconductors
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each spin relaxation mechanism is compared and the diagrams sho...
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| creator | Song, Pil Hun Kim, K. W |
| description | Spin relaxation time of conduction electrons through the Elliot-Yafet,
D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for
bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance
of each spin relaxation mechanism is compared and the diagrams showing the
dominant mechanism are constructed as a function of temperature and impurity
concentrations. Our approach is based upon theoretical calculation of the
momentum relaxation rate and allows understanding of the interplay between
various factors affecting the spin relaxation over a broad range of temperature
and impurity concentration. |
| doi_str_mv | 10.48550/arxiv.cond-mat/0111076 |
| format | Article |
| fullrecord | <record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_cond_mat_0111076</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>cond_mat_0111076</sourcerecordid><originalsourceid>FETCH-arxiv_primary_cond_mat_01110763</originalsourceid><addsrcrecordid>eNpjYJA3NNAzsTA1NdBPLKrILNNLzs9L0c1NLNE3MDQ0NDA342RwCS7IzFMoSs1JrEgsyczPU8hPUwCpKk0G81JzUpNLivLzihWAqpJKc7IVPD09dcMUilNzM6HK8ouKeRhY0xJzilN5oTQ3g6qba4izhy7Y1viCoszcxKLKeJCGeKDt8VDbjYlVBwALuEC4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Spin relaxation of conduction electrons in bulk III-V semiconductors</title><source>arXiv.org</source><creator>Song, Pil Hun ; Kim, K. W</creator><creatorcontrib>Song, Pil Hun ; Kim, K. W</creatorcontrib><description>Spin relaxation time of conduction electrons through the Elliot-Yafet,
D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for
bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance
of each spin relaxation mechanism is compared and the diagrams showing the
dominant mechanism are constructed as a function of temperature and impurity
concentrations. Our approach is based upon theoretical calculation of the
momentum relaxation rate and allows understanding of the interplay between
various factors affecting the spin relaxation over a broad range of temperature
and impurity concentration.</description><identifier>DOI: 10.48550/arxiv.cond-mat/0111076</identifier><language>eng</language><subject>Physics - Materials Science</subject><creationdate>2001-11</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,881</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/cond-mat/0111076$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.cond-mat/0111076$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.66.035207$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Song, Pil Hun</creatorcontrib><creatorcontrib>Kim, K. W</creatorcontrib><title>Spin relaxation of conduction electrons in bulk III-V semiconductors</title><description>Spin relaxation time of conduction electrons through the Elliot-Yafet,
D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for
bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance
of each spin relaxation mechanism is compared and the diagrams showing the
dominant mechanism are constructed as a function of temperature and impurity
concentrations. Our approach is based upon theoretical calculation of the
momentum relaxation rate and allows understanding of the interplay between
various factors affecting the spin relaxation over a broad range of temperature
and impurity concentration.</description><subject>Physics - Materials Science</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNpjYJA3NNAzsTA1NdBPLKrILNNLzs9L0c1NLNE3MDQ0NDA342RwCS7IzFMoSs1JrEgsyczPU8hPUwCpKk0G81JzUpNLivLzihWAqpJKc7IVPD09dcMUilNzM6HK8ouKeRhY0xJzilN5oTQ3g6qba4izhy7Y1viCoszcxKLKeJCGeKDt8VDbjYlVBwALuEC4</recordid><startdate>20011105</startdate><enddate>20011105</enddate><creator>Song, Pil Hun</creator><creator>Kim, K. W</creator><scope>GOX</scope></search><sort><creationdate>20011105</creationdate><title>Spin relaxation of conduction electrons in bulk III-V semiconductors</title><author>Song, Pil Hun ; Kim, K. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-arxiv_primary_cond_mat_01110763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Physics - Materials Science</topic><toplevel>online_resources</toplevel><creatorcontrib>Song, Pil Hun</creatorcontrib><creatorcontrib>Kim, K. W</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Song, Pil Hun</au><au>Kim, K. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin relaxation of conduction electrons in bulk III-V semiconductors</atitle><date>2001-11-05</date><risdate>2001</risdate><abstract>Spin relaxation time of conduction electrons through the Elliot-Yafet,
D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for
bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance
of each spin relaxation mechanism is compared and the diagrams showing the
dominant mechanism are constructed as a function of temperature and impurity
concentrations. Our approach is based upon theoretical calculation of the
momentum relaxation rate and allows understanding of the interplay between
various factors affecting the spin relaxation over a broad range of temperature
and impurity concentration.</abstract><doi>10.48550/arxiv.cond-mat/0111076</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Physics - Materials Science |
| title | Spin relaxation of conduction electrons in bulk III-V semiconductors |
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