Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum inf...

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Veröffentlicht in:	arXiv.org 2024-12
Hauptverfasser:	Castelló, O, López Baptista, Sofía M, Watanabe, K, Taniguchi, T, Diez, E, Velázquez-Pérez, J E, Meziani, Y M, Caridad, J M, Delgado-Notario, J A
Format:	Artikel
Sprache:	eng
Schlagworte:	Field effect transistors Graphene Medical imaging Performance enhancement Photometers Physics - Instrumentation and Detectors Physics - Mesoscale and Nanoscale Physics Quantum phenomena Semiconductor devices Wireless communications
Online-Zugang:	Volltext
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