Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces

To meet the demand for high-speed response in display applications, a more detailed study of the capacitive effects in LEDs is required. This work tested the capacitance of LEDs at different frequencies and proposed an effective capacitance model, which achieved a good fit to the frequency dispersio...

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Hauptverfasser: Li, Yuchen, Chen, Zhizhong, Deng, Chuhan, Dong, Boyan, Wang, Daqi, Pan, Zuojian, Zhang, Haodong, Nie, Jingxin, Chen, Weihua, Jiao, Fei, Kang, Xiangning, Wang, Qi, Zhang, Guoyi, Shen, Bo, Liang, Wenji
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creator Li, Yuchen
Chen, Zhizhong
Deng, Chuhan
Dong, Boyan
Wang, Daqi
Pan, Zuojian
Zhang, Haodong
Nie, Jingxin
Chen, Weihua
Jiao, Fei
Kang, Xiangning
Wang, Qi
Zhang, Guoyi
Shen, Bo
Liang, Wenji
description To meet the demand for high-speed response in display applications, a more detailed study of the capacitive effects in LEDs is required. This work tested the capacitance of LEDs at different frequencies and proposed an effective capacitance model, which achieved a good fit to the frequency dispersion observed in the experimental results. Additionally, it was determined that the low-frequency 1/f capacitance originates from the metal-semiconductor interface.
doi_str_mv 10.48550/arxiv.2411.16626
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title Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces
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