Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces
To meet the demand for high-speed response in display applications, a more detailed study of the capacitive effects in LEDs is required. This work tested the capacitance of LEDs at different frequencies and proposed an effective capacitance model, which achieved a good fit to the frequency dispersio...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , , , , , , |
---|---|
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Li, Yuchen Chen, Zhizhong Deng, Chuhan Dong, Boyan Wang, Daqi Pan, Zuojian Zhang, Haodong Nie, Jingxin Chen, Weihua Jiao, Fei Kang, Xiangning Wang, Qi Zhang, Guoyi Shen, Bo Liang, Wenji |
description | To meet the demand for high-speed response in display applications, a more
detailed study of the capacitive effects in LEDs is required. This work tested
the capacitance of LEDs at different frequencies and proposed an effective
capacitance model, which achieved a good fit to the frequency dispersion
observed in the experimental results. Additionally, it was determined that the
low-frequency 1/f capacitance originates from the metal-semiconductor
interface. |
doi_str_mv | 10.48550/arxiv.2411.16626 |
format | Article |
fullrecord | <record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_2411_16626</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2411_16626</sourcerecordid><originalsourceid>FETCH-arxiv_primary_2411_166263</originalsourceid><addsrcrecordid>eNpjYJA0NNAzsTA1NdBPLKrILNMzMjE01DM0MzMy42QI8EtNTyzJLEtVcE4sSEzOLEnMS05VyMxT8MxzT_TTB2IFp8Ti1BQFH1eXYoW0ovxchdzUksQc3eLU3Mzk_LyU0uSS_CKghpLUorTE5NRiHgbWtMSc4lReKM3NIO_mGuLsoQu2O76gKDM3sagyHuSGeLAbjAmrAAB3ATvB</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces</title><source>arXiv.org</source><creator>Li, Yuchen ; Chen, Zhizhong ; Deng, Chuhan ; Dong, Boyan ; Wang, Daqi ; Pan, Zuojian ; Zhang, Haodong ; Nie, Jingxin ; Chen, Weihua ; Jiao, Fei ; Kang, Xiangning ; Wang, Qi ; Zhang, Guoyi ; Shen, Bo ; Liang, Wenji</creator><creatorcontrib>Li, Yuchen ; Chen, Zhizhong ; Deng, Chuhan ; Dong, Boyan ; Wang, Daqi ; Pan, Zuojian ; Zhang, Haodong ; Nie, Jingxin ; Chen, Weihua ; Jiao, Fei ; Kang, Xiangning ; Wang, Qi ; Zhang, Guoyi ; Shen, Bo ; Liang, Wenji</creatorcontrib><description>To meet the demand for high-speed response in display applications, a more
detailed study of the capacitive effects in LEDs is required. This work tested
the capacitance of LEDs at different frequencies and proposed an effective
capacitance model, which achieved a good fit to the frequency dispersion
observed in the experimental results. Additionally, it was determined that the
low-frequency 1/f capacitance originates from the metal-semiconductor
interface.</description><identifier>DOI: 10.48550/arxiv.2411.16626</identifier><language>eng</language><subject>Physics - Applied Physics</subject><creationdate>2024-11</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2411.16626$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2411.16626$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Yuchen</creatorcontrib><creatorcontrib>Chen, Zhizhong</creatorcontrib><creatorcontrib>Deng, Chuhan</creatorcontrib><creatorcontrib>Dong, Boyan</creatorcontrib><creatorcontrib>Wang, Daqi</creatorcontrib><creatorcontrib>Pan, Zuojian</creatorcontrib><creatorcontrib>Zhang, Haodong</creatorcontrib><creatorcontrib>Nie, Jingxin</creatorcontrib><creatorcontrib>Chen, Weihua</creatorcontrib><creatorcontrib>Jiao, Fei</creatorcontrib><creatorcontrib>Kang, Xiangning</creatorcontrib><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Zhang, Guoyi</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><creatorcontrib>Liang, Wenji</creatorcontrib><title>Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces</title><description>To meet the demand for high-speed response in display applications, a more
detailed study of the capacitive effects in LEDs is required. This work tested
the capacitance of LEDs at different frequencies and proposed an effective
capacitance model, which achieved a good fit to the frequency dispersion
observed in the experimental results. Additionally, it was determined that the
low-frequency 1/f capacitance originates from the metal-semiconductor
interface.</description><subject>Physics - Applied Physics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNpjYJA0NNAzsTA1NdBPLKrILNMzMjE01DM0MzMy42QI8EtNTyzJLEtVcE4sSEzOLEnMS05VyMxT8MxzT_TTB2IFp8Ti1BQFH1eXYoW0ovxchdzUksQc3eLU3Mzk_LyU0uSS_CKghpLUorTE5NRiHgbWtMSc4lReKM3NIO_mGuLsoQu2O76gKDM3sagyHuSGeLAbjAmrAAB3ATvB</recordid><startdate>20241125</startdate><enddate>20241125</enddate><creator>Li, Yuchen</creator><creator>Chen, Zhizhong</creator><creator>Deng, Chuhan</creator><creator>Dong, Boyan</creator><creator>Wang, Daqi</creator><creator>Pan, Zuojian</creator><creator>Zhang, Haodong</creator><creator>Nie, Jingxin</creator><creator>Chen, Weihua</creator><creator>Jiao, Fei</creator><creator>Kang, Xiangning</creator><creator>Wang, Qi</creator><creator>Zhang, Guoyi</creator><creator>Shen, Bo</creator><creator>Liang, Wenji</creator><scope>GOX</scope></search><sort><creationdate>20241125</creationdate><title>Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces</title><author>Li, Yuchen ; Chen, Zhizhong ; Deng, Chuhan ; Dong, Boyan ; Wang, Daqi ; Pan, Zuojian ; Zhang, Haodong ; Nie, Jingxin ; Chen, Weihua ; Jiao, Fei ; Kang, Xiangning ; Wang, Qi ; Zhang, Guoyi ; Shen, Bo ; Liang, Wenji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-arxiv_primary_2411_166263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Physics - Applied Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Li, Yuchen</creatorcontrib><creatorcontrib>Chen, Zhizhong</creatorcontrib><creatorcontrib>Deng, Chuhan</creatorcontrib><creatorcontrib>Dong, Boyan</creatorcontrib><creatorcontrib>Wang, Daqi</creatorcontrib><creatorcontrib>Pan, Zuojian</creatorcontrib><creatorcontrib>Zhang, Haodong</creatorcontrib><creatorcontrib>Nie, Jingxin</creatorcontrib><creatorcontrib>Chen, Weihua</creatorcontrib><creatorcontrib>Jiao, Fei</creatorcontrib><creatorcontrib>Kang, Xiangning</creatorcontrib><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Zhang, Guoyi</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><creatorcontrib>Liang, Wenji</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Yuchen</au><au>Chen, Zhizhong</au><au>Deng, Chuhan</au><au>Dong, Boyan</au><au>Wang, Daqi</au><au>Pan, Zuojian</au><au>Zhang, Haodong</au><au>Nie, Jingxin</au><au>Chen, Weihua</au><au>Jiao, Fei</au><au>Kang, Xiangning</au><au>Wang, Qi</au><au>Zhang, Guoyi</au><au>Shen, Bo</au><au>Liang, Wenji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces</atitle><date>2024-11-25</date><risdate>2024</risdate><abstract>To meet the demand for high-speed response in display applications, a more
detailed study of the capacitive effects in LEDs is required. This work tested
the capacitance of LEDs at different frequencies and proposed an effective
capacitance model, which achieved a good fit to the frequency dispersion
observed in the experimental results. Additionally, it was determined that the
low-frequency 1/f capacitance originates from the metal-semiconductor
interface.</abstract><doi>10.48550/arxiv.2411.16626</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | DOI: 10.48550/arxiv.2411.16626 |
ispartof | |
issn | |
language | eng |
recordid | cdi_arxiv_primary_2411_16626 |
source | arXiv.org |
subjects | Physics - Applied Physics |
title | Negative Capacitance in InGaN/GaN Based LEDs from metal-semiconductor interfaces |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T18%3A03%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-arxiv_GOX&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Negative%20Capacitance%20in%20InGaN/GaN%20Based%20LEDs%20from%20metal-semiconductor%20interfaces&rft.au=Li,%20Yuchen&rft.date=2024-11-25&rft_id=info:doi/10.48550/arxiv.2411.16626&rft_dat=%3Carxiv_GOX%3E2411_16626%3C/arxiv_GOX%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |