One-step synthesis of graphene containing topological defects
Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carb...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Klein, Benedikt P Stoodley, Matthew A Deyerling, Joel Rochford, Luke A Morgan, Dylan B Hopkinson, David Sullivan-Allsop, Sam Eratam, Fulden Sattler, Lars Weber, Sebastian M Hilt, Gerhard Generalov, Alexander Preobrajenski, Alexei Liddy, Thomas Williams, Leon B. S Lee, Tien-Lin Saywell, Alex Gorbachev, Roman Haigh, Sarah J Allen, Christopher Auwärter, Willi Maurer, Reinhard J Duncan, David A |
| description | Chemical vapour deposition enables large-domain growth of ideal graphene, yet
many applications of graphene require the controlled inclusion of specific
defects. We present a one-step chemical vapour deposition procedure aimed at
retaining the precursor topology when incorporated into the grown carbonaceous
film. When azupyrene, the molecular analogue of the Stone-Wales defect in
graphene, is used as a precursor, carbonaceous monolayers with a range of
morphologies are produced as a function of the copper substrate growth
temperature. The higher the substrate temperature during deposition, the closer
the resulting monolayer is to ideal graphene. Analysis, with a set of
complementary materials characterisation techniques, reveals morphological
changes closely correlated with changes in the atomic adsorption heights,
network topology, and concentration of 5-/7-membered carbon rings. The
engineered defective carbon monolayers can be transferred to different
substrates, potentially enabling applications in nanoelectronics, sensorics,
and catalysis. |
| doi_str_mv | 10.48550/arxiv.2411.02676 |
| format | Article |
| fullrecord | <record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_2411_02676</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2411_02676</sourcerecordid><originalsourceid>FETCH-arxiv_primary_2411_026763</originalsourceid><addsrcrecordid>eNpjYJA0NNAzsTA1NdBPLKrILNMzMjE01DMwMjM342Sw9c9L1S0uSS1QKK7MK8lILc4sVshPU0gvSizISM1LVUjOzytJzMzLzEtXKMkvyM_JT89MTsxRSElNS00uKeZhYE1LzClO5YXS3Azybq4hzh66YIviC4oycxOLKuNBFsaDLTQmrAIAhNw2QQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>One-step synthesis of graphene containing topological defects</title><source>arXiv.org</source><creator>Klein, Benedikt P ; Stoodley, Matthew A ; Deyerling, Joel ; Rochford, Luke A ; Morgan, Dylan B ; Hopkinson, David ; Sullivan-Allsop, Sam ; Eratam, Fulden ; Sattler, Lars ; Weber, Sebastian M ; Hilt, Gerhard ; Generalov, Alexander ; Preobrajenski, Alexei ; Liddy, Thomas ; Williams, Leon B. S ; Lee, Tien-Lin ; Saywell, Alex ; Gorbachev, Roman ; Haigh, Sarah J ; Allen, Christopher ; Auwärter, Willi ; Maurer, Reinhard J ; Duncan, David A</creator><creatorcontrib>Klein, Benedikt P ; Stoodley, Matthew A ; Deyerling, Joel ; Rochford, Luke A ; Morgan, Dylan B ; Hopkinson, David ; Sullivan-Allsop, Sam ; Eratam, Fulden ; Sattler, Lars ; Weber, Sebastian M ; Hilt, Gerhard ; Generalov, Alexander ; Preobrajenski, Alexei ; Liddy, Thomas ; Williams, Leon B. S ; Lee, Tien-Lin ; Saywell, Alex ; Gorbachev, Roman ; Haigh, Sarah J ; Allen, Christopher ; Auwärter, Willi ; Maurer, Reinhard J ; Duncan, David A</creatorcontrib><description>Chemical vapour deposition enables large-domain growth of ideal graphene, yet
many applications of graphene require the controlled inclusion of specific
defects. We present a one-step chemical vapour deposition procedure aimed at
retaining the precursor topology when incorporated into the grown carbonaceous
film. When azupyrene, the molecular analogue of the Stone-Wales defect in
graphene, is used as a precursor, carbonaceous monolayers with a range of
morphologies are produced as a function of the copper substrate growth
temperature. The higher the substrate temperature during deposition, the closer
the resulting monolayer is to ideal graphene. Analysis, with a set of
complementary materials characterisation techniques, reveals morphological
changes closely correlated with changes in the atomic adsorption heights,
network topology, and concentration of 5-/7-membered carbon rings. The
engineered defective carbon monolayers can be transferred to different
substrates, potentially enabling applications in nanoelectronics, sensorics,
and catalysis.</description><identifier>DOI: 10.48550/arxiv.2411.02676</identifier><language>eng</language><subject>Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics</subject><creationdate>2024-11</creationdate><rights>http://creativecommons.org/licenses/by-nc-nd/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2411.02676$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2411.02676$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Klein, Benedikt P</creatorcontrib><creatorcontrib>Stoodley, Matthew A</creatorcontrib><creatorcontrib>Deyerling, Joel</creatorcontrib><creatorcontrib>Rochford, Luke A</creatorcontrib><creatorcontrib>Morgan, Dylan B</creatorcontrib><creatorcontrib>Hopkinson, David</creatorcontrib><creatorcontrib>Sullivan-Allsop, Sam</creatorcontrib><creatorcontrib>Eratam, Fulden</creatorcontrib><creatorcontrib>Sattler, Lars</creatorcontrib><creatorcontrib>Weber, Sebastian M</creatorcontrib><creatorcontrib>Hilt, Gerhard</creatorcontrib><creatorcontrib>Generalov, Alexander</creatorcontrib><creatorcontrib>Preobrajenski, Alexei</creatorcontrib><creatorcontrib>Liddy, Thomas</creatorcontrib><creatorcontrib>Williams, Leon B. S</creatorcontrib><creatorcontrib>Lee, Tien-Lin</creatorcontrib><creatorcontrib>Saywell, Alex</creatorcontrib><creatorcontrib>Gorbachev, Roman</creatorcontrib><creatorcontrib>Haigh, Sarah J</creatorcontrib><creatorcontrib>Allen, Christopher</creatorcontrib><creatorcontrib>Auwärter, Willi</creatorcontrib><creatorcontrib>Maurer, Reinhard J</creatorcontrib><creatorcontrib>Duncan, David A</creatorcontrib><title>One-step synthesis of graphene containing topological defects</title><description>Chemical vapour deposition enables large-domain growth of ideal graphene, yet
many applications of graphene require the controlled inclusion of specific
defects. We present a one-step chemical vapour deposition procedure aimed at
retaining the precursor topology when incorporated into the grown carbonaceous
film. When azupyrene, the molecular analogue of the Stone-Wales defect in
graphene, is used as a precursor, carbonaceous monolayers with a range of
morphologies are produced as a function of the copper substrate growth
temperature. The higher the substrate temperature during deposition, the closer
the resulting monolayer is to ideal graphene. Analysis, with a set of
complementary materials characterisation techniques, reveals morphological
changes closely correlated with changes in the atomic adsorption heights,
network topology, and concentration of 5-/7-membered carbon rings. The
engineered defective carbon monolayers can be transferred to different
substrates, potentially enabling applications in nanoelectronics, sensorics,
and catalysis.</description><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNpjYJA0NNAzsTA1NdBPLKrILNMzMjE01DMwMjM342Sw9c9L1S0uSS1QKK7MK8lILc4sVshPU0gvSizISM1LVUjOzytJzMzLzEtXKMkvyM_JT89MTsxRSElNS00uKeZhYE1LzClO5YXS3Azybq4hzh66YIviC4oycxOLKuNBFsaDLTQmrAIAhNw2QQ</recordid><startdate>20241104</startdate><enddate>20241104</enddate><creator>Klein, Benedikt P</creator><creator>Stoodley, Matthew A</creator><creator>Deyerling, Joel</creator><creator>Rochford, Luke A</creator><creator>Morgan, Dylan B</creator><creator>Hopkinson, David</creator><creator>Sullivan-Allsop, Sam</creator><creator>Eratam, Fulden</creator><creator>Sattler, Lars</creator><creator>Weber, Sebastian M</creator><creator>Hilt, Gerhard</creator><creator>Generalov, Alexander</creator><creator>Preobrajenski, Alexei</creator><creator>Liddy, Thomas</creator><creator>Williams, Leon B. S</creator><creator>Lee, Tien-Lin</creator><creator>Saywell, Alex</creator><creator>Gorbachev, Roman</creator><creator>Haigh, Sarah J</creator><creator>Allen, Christopher</creator><creator>Auwärter, Willi</creator><creator>Maurer, Reinhard J</creator><creator>Duncan, David A</creator><scope>GOX</scope></search><sort><creationdate>20241104</creationdate><title>One-step synthesis of graphene containing topological defects</title><author>Klein, Benedikt P ; Stoodley, Matthew A ; Deyerling, Joel ; Rochford, Luke A ; Morgan, Dylan B ; Hopkinson, David ; Sullivan-Allsop, Sam ; Eratam, Fulden ; Sattler, Lars ; Weber, Sebastian M ; Hilt, Gerhard ; Generalov, Alexander ; Preobrajenski, Alexei ; Liddy, Thomas ; Williams, Leon B. S ; Lee, Tien-Lin ; Saywell, Alex ; Gorbachev, Roman ; Haigh, Sarah J ; Allen, Christopher ; Auwärter, Willi ; Maurer, Reinhard J ; Duncan, David A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-arxiv_primary_2411_026763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Klein, Benedikt P</creatorcontrib><creatorcontrib>Stoodley, Matthew A</creatorcontrib><creatorcontrib>Deyerling, Joel</creatorcontrib><creatorcontrib>Rochford, Luke A</creatorcontrib><creatorcontrib>Morgan, Dylan B</creatorcontrib><creatorcontrib>Hopkinson, David</creatorcontrib><creatorcontrib>Sullivan-Allsop, Sam</creatorcontrib><creatorcontrib>Eratam, Fulden</creatorcontrib><creatorcontrib>Sattler, Lars</creatorcontrib><creatorcontrib>Weber, Sebastian M</creatorcontrib><creatorcontrib>Hilt, Gerhard</creatorcontrib><creatorcontrib>Generalov, Alexander</creatorcontrib><creatorcontrib>Preobrajenski, Alexei</creatorcontrib><creatorcontrib>Liddy, Thomas</creatorcontrib><creatorcontrib>Williams, Leon B. S</creatorcontrib><creatorcontrib>Lee, Tien-Lin</creatorcontrib><creatorcontrib>Saywell, Alex</creatorcontrib><creatorcontrib>Gorbachev, Roman</creatorcontrib><creatorcontrib>Haigh, Sarah J</creatorcontrib><creatorcontrib>Allen, Christopher</creatorcontrib><creatorcontrib>Auwärter, Willi</creatorcontrib><creatorcontrib>Maurer, Reinhard J</creatorcontrib><creatorcontrib>Duncan, David A</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Klein, Benedikt P</au><au>Stoodley, Matthew A</au><au>Deyerling, Joel</au><au>Rochford, Luke A</au><au>Morgan, Dylan B</au><au>Hopkinson, David</au><au>Sullivan-Allsop, Sam</au><au>Eratam, Fulden</au><au>Sattler, Lars</au><au>Weber, Sebastian M</au><au>Hilt, Gerhard</au><au>Generalov, Alexander</au><au>Preobrajenski, Alexei</au><au>Liddy, Thomas</au><au>Williams, Leon B. S</au><au>Lee, Tien-Lin</au><au>Saywell, Alex</au><au>Gorbachev, Roman</au><au>Haigh, Sarah J</au><au>Allen, Christopher</au><au>Auwärter, Willi</au><au>Maurer, Reinhard J</au><au>Duncan, David A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>One-step synthesis of graphene containing topological defects</atitle><date>2024-11-04</date><risdate>2024</risdate><abstract>Chemical vapour deposition enables large-domain growth of ideal graphene, yet
many applications of graphene require the controlled inclusion of specific
defects. We present a one-step chemical vapour deposition procedure aimed at
retaining the precursor topology when incorporated into the grown carbonaceous
film. When azupyrene, the molecular analogue of the Stone-Wales defect in
graphene, is used as a precursor, carbonaceous monolayers with a range of
morphologies are produced as a function of the copper substrate growth
temperature. The higher the substrate temperature during deposition, the closer
the resulting monolayer is to ideal graphene. Analysis, with a set of
complementary materials characterisation techniques, reveals morphological
changes closely correlated with changes in the atomic adsorption heights,
network topology, and concentration of 5-/7-membered carbon rings. The
engineered defective carbon monolayers can be transferred to different
substrates, potentially enabling applications in nanoelectronics, sensorics,
and catalysis.</abstract><doi>10.48550/arxiv.2411.02676</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | DOI: 10.48550/arxiv.2411.02676 |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_arxiv_primary_2411_02676 |
| source | arXiv.org |
| subjects | Physics - Materials Science Physics - Mesoscale and Nanoscale Physics |
| title | One-step synthesis of graphene containing topological defects |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T13%3A17%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-arxiv_GOX&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=One-step%20synthesis%20of%20graphene%20containing%20topological%20defects&rft.au=Klein,%20Benedikt%20P&rft.date=2024-11-04&rft_id=info:doi/10.48550/arxiv.2411.02676&rft_dat=%3Carxiv_GOX%3E2411_02676%3C/arxiv_GOX%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |