Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrica...
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| creator | Pasquale, Gabriele Sun, Zhe Watanabe, Kenji Taniguchi, Takashi Kis, Andras |
| description | The Nernst effect, a transverse thermoelectric phenomenon, has attracted
significant attention for its potential in energy conversion, thermoelectrics,
and spintronics. However, achieving high performance and versatility at low
temperatures remains elusive. Here, we demonstrate a large and electrically
tunable Nernst effect by combining graphene's electrical properties with indium
selenide's semiconducting nature in a field-effect geometry. Our results
establish a novel platform for exploring and manipulating this thermoelectric
effect, showcasing the first electrical tunability with an on/off ratio of
10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal
in the Gr/InSe heterostructure compared to individual components. Remarkably,
we observe a record-high Nernst coefficient of 66.4 {\mu}V K^(-1) T^(-1) at
ultra-low temperatures and low magnetic fields, paving the way toward
applications in quantum information and low-temperature emergent phenomena. |
| doi_str_mv | 10.48550/arxiv.2406.16194 |
| format | Article |
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significant attention for its potential in energy conversion, thermoelectrics,
and spintronics. However, achieving high performance and versatility at low
temperatures remains elusive. Here, we demonstrate a large and electrically
tunable Nernst effect by combining graphene's electrical properties with indium
selenide's semiconducting nature in a field-effect geometry. Our results
establish a novel platform for exploring and manipulating this thermoelectric
effect, showcasing the first electrical tunability with an on/off ratio of
10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal
in the Gr/InSe heterostructure compared to individual components. Remarkably,
we observe a record-high Nernst coefficient of 66.4 {\mu}V K^(-1) T^(-1) at
ultra-low temperatures and low magnetic fields, paving the way toward
applications in quantum information and low-temperature emergent phenomena.</description><identifier>DOI: 10.48550/arxiv.2406.16194</identifier><language>eng</language><subject>Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics</subject><creationdate>2024-06</creationdate><rights>http://creativecommons.org/licenses/by-nc-nd/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2406.16194$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2406.16194$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Pasquale, Gabriele</creatorcontrib><creatorcontrib>Sun, Zhe</creatorcontrib><creatorcontrib>Watanabe, Kenji</creatorcontrib><creatorcontrib>Taniguchi, Takashi</creatorcontrib><creatorcontrib>Kis, Andras</creatorcontrib><title>Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures</title><description>The Nernst effect, a transverse thermoelectric phenomenon, has attracted
significant attention for its potential in energy conversion, thermoelectrics,
and spintronics. However, achieving high performance and versatility at low
temperatures remains elusive. Here, we demonstrate a large and electrically
tunable Nernst effect by combining graphene's electrical properties with indium
selenide's semiconducting nature in a field-effect geometry. Our results
establish a novel platform for exploring and manipulating this thermoelectric
effect, showcasing the first electrical tunability with an on/off ratio of
10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal
in the Gr/InSe heterostructure compared to individual components. Remarkably,
we observe a record-high Nernst coefficient of 66.4 {\mu}V K^(-1) T^(-1) at
ultra-low temperatures and low magnetic fields, paving the way toward
applications in quantum information and low-temperature emergent phenomena.</description><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotz81KAzEUBeBsXEj1AVyZF5gxmWQyyVJK_YGim4LgZriT3GkDaUaSTLVvb61dHTgcDnyE3HFWS9227AHSjz_UjWSq5oobeU0-VwFtSd5CCEda5ghDQLr1EAt9wxRzoTiOpwn1kZbvqXJ-jzH7KUKgB4jUYaIfACHTHRZMUy5ptmVOmG_I1Xjq8faSC7J5Wm2WL9X6_fl1-biuQHWysnzQnWGNU5qDcAMKZxwzSmhUputcC9Yq1hqOxig2NqYb2TA0VqLVrWJWLMj9_-0Z138lv4d07P-Q_RkpfgFafk4k</recordid><startdate>20240623</startdate><enddate>20240623</enddate><creator>Pasquale, Gabriele</creator><creator>Sun, Zhe</creator><creator>Watanabe, Kenji</creator><creator>Taniguchi, Takashi</creator><creator>Kis, Andras</creator><scope>GOX</scope></search><sort><creationdate>20240623</creationdate><title>Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures</title><author>Pasquale, Gabriele ; Sun, Zhe ; Watanabe, Kenji ; Taniguchi, Takashi ; Kis, Andras</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a674-c1b87902d681a3dbe3d9d09638e6977d5acc60591e9960f297f0bb2c4ec8560c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Pasquale, Gabriele</creatorcontrib><creatorcontrib>Sun, Zhe</creatorcontrib><creatorcontrib>Watanabe, Kenji</creatorcontrib><creatorcontrib>Taniguchi, Takashi</creatorcontrib><creatorcontrib>Kis, Andras</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pasquale, Gabriele</au><au>Sun, Zhe</au><au>Watanabe, Kenji</au><au>Taniguchi, Takashi</au><au>Kis, Andras</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures</atitle><date>2024-06-23</date><risdate>2024</risdate><abstract>The Nernst effect, a transverse thermoelectric phenomenon, has attracted
significant attention for its potential in energy conversion, thermoelectrics,
and spintronics. However, achieving high performance and versatility at low
temperatures remains elusive. Here, we demonstrate a large and electrically
tunable Nernst effect by combining graphene's electrical properties with indium
selenide's semiconducting nature in a field-effect geometry. Our results
establish a novel platform for exploring and manipulating this thermoelectric
effect, showcasing the first electrical tunability with an on/off ratio of
10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal
in the Gr/InSe heterostructure compared to individual components. Remarkably,
we observe a record-high Nernst coefficient of 66.4 {\mu}V K^(-1) T^(-1) at
ultra-low temperatures and low magnetic fields, paving the way toward
applications in quantum information and low-temperature emergent phenomena.</abstract><doi>10.48550/arxiv.2406.16194</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Physics - Materials Science Physics - Mesoscale and Nanoscale Physics |
| title | Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures |
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