Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer

HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which...

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Bibliographische Detailangaben

Hauptverfasser:	Yavorskiy, D, Ivonyak, Y, But, D, Karpierz, K, Krajewska, A, Haras, M, Sai, P, Dub, M, Kazakov, A, Cywiński, G, Knap, W, Łusakowski, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science
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