Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers

We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently the electron and hole densities, can be continuously tuned....

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Veröffentlicht in:	arXiv.org 2024-04
Hauptverfasser:	Han, Zhongdong, Li, Tingxin, Zhang, Long, Rui-Rui Du
Format:	Artikel
Sprache:	eng
Schlagworte:	Broken symmetry Controllability Critical point Density Electrons Gallium antimonides Holes (electron deficiencies) Indium arsenides Magnetic fields Phase transitions Physics - Mesoscale and Nanoscale Physics Topology
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