A Fully Automated Platform for Evaluating ReRAM Crossbars

Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices,...

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Hauptverfasser: Pelke, Rebecca, Staudigl, Felix, Thomas, Niklas, Bosbach, Nils, Hossein, Mohammed, Cubero-Cascante, Jose, Poehls, Leticia Bolzani, Leupers, Rainer, Joseph, Jan Moritz
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creator Pelke, Rebecca
Staudigl, Felix
Thomas, Niklas
Bosbach, Nils
Hossein, Mohammed
Cubero-Cascante, Jose
Poehls, Leticia Bolzani
Leupers, Rainer
Joseph, Jan Moritz
description Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices, algorithms, and applications. To achieve this, understanding the stochastic behavior of the different ReRAM technologies is essential. The NeuroBreakoutBoard (NBB) is a versatile instrumentation platform to characterize Non-Volatile Memories (NVMs). However, the NBB itself does not provide any functionality in the form of software or a controller. In this paper, we present a control board for the NBB able to perform reliability assessments of 1T1R ReRAM crossbars. In more detail, an interface that allows a host PC to communicate with the NBB via the new control board is implemented. In a case study, we analyze the Cycle-to-Cycle (C2C) variation and read disturb TiN/Ti/HfO2/TiN cells for different read voltages to gain an understanding of their operational behavior.
doi_str_mv 10.48550/arxiv.2403.13655
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fullrecord <record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_2403_13655</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2403_13655</sourcerecordid><originalsourceid>FETCH-LOGICAL-a675-c365ebe8dfe59af440f8c7268a5d43af20e1cbcc63d7abbaa3f71048de8309fb3</originalsourceid><addsrcrecordid>eNotj8sOgjAURLtxYdAPcGV_ACy0hbIkxFei0Rj35PZlSIqYAkb_3udmZjdnDkKzmERMcE4W4B_1PUoYoVFMU87HKC_wanDuiYuhbxvojcZHB71tfYPfgZd3cAP09fWCT-ZU7HHp266T4LsJGllwnZn-O0Dn1fJcbsLdYb0ti10IacZD9cYYaYS2hudgGSNWqCxJBXDNKNiEmFhJpVKqM5ASgNosJkxoIyjJraQBmv9mv9-rm68b8M_q41B9HegLxXZBwA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A Fully Automated Platform for Evaluating ReRAM Crossbars</title><source>arXiv.org</source><creator>Pelke, Rebecca ; Staudigl, Felix ; Thomas, Niklas ; Bosbach, Nils ; Hossein, Mohammed ; Cubero-Cascante, Jose ; Poehls, Leticia Bolzani ; Leupers, Rainer ; Joseph, Jan Moritz</creator><creatorcontrib>Pelke, Rebecca ; Staudigl, Felix ; Thomas, Niklas ; Bosbach, Nils ; Hossein, Mohammed ; Cubero-Cascante, Jose ; Poehls, Leticia Bolzani ; Leupers, Rainer ; Joseph, Jan Moritz</creatorcontrib><description>Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices, algorithms, and applications. To achieve this, understanding the stochastic behavior of the different ReRAM technologies is essential. The NeuroBreakoutBoard (NBB) is a versatile instrumentation platform to characterize Non-Volatile Memories (NVMs). However, the NBB itself does not provide any functionality in the form of software or a controller. In this paper, we present a control board for the NBB able to perform reliability assessments of 1T1R ReRAM crossbars. In more detail, an interface that allows a host PC to communicate with the NBB via the new control board is implemented. In a case study, we analyze the Cycle-to-Cycle (C2C) variation and read disturb TiN/Ti/HfO2/TiN cells for different read voltages to gain an understanding of their operational behavior.</description><identifier>DOI: 10.48550/arxiv.2403.13655</identifier><language>eng</language><subject>Computer Science - Emerging Technologies</subject><creationdate>2024-03</creationdate><rights>http://creativecommons.org/licenses/by/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2403.13655$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2403.13655$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Pelke, Rebecca</creatorcontrib><creatorcontrib>Staudigl, Felix</creatorcontrib><creatorcontrib>Thomas, Niklas</creatorcontrib><creatorcontrib>Bosbach, Nils</creatorcontrib><creatorcontrib>Hossein, Mohammed</creatorcontrib><creatorcontrib>Cubero-Cascante, Jose</creatorcontrib><creatorcontrib>Poehls, Leticia Bolzani</creatorcontrib><creatorcontrib>Leupers, Rainer</creatorcontrib><creatorcontrib>Joseph, Jan Moritz</creatorcontrib><title>A Fully Automated Platform for Evaluating ReRAM Crossbars</title><description>Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices, algorithms, and applications. To achieve this, understanding the stochastic behavior of the different ReRAM technologies is essential. The NeuroBreakoutBoard (NBB) is a versatile instrumentation platform to characterize Non-Volatile Memories (NVMs). However, the NBB itself does not provide any functionality in the form of software or a controller. In this paper, we present a control board for the NBB able to perform reliability assessments of 1T1R ReRAM crossbars. In more detail, an interface that allows a host PC to communicate with the NBB via the new control board is implemented. In a case study, we analyze the Cycle-to-Cycle (C2C) variation and read disturb TiN/Ti/HfO2/TiN cells for different read voltages to gain an understanding of their operational behavior.</description><subject>Computer Science - Emerging Technologies</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj8sOgjAURLtxYdAPcGV_ACy0hbIkxFei0Rj35PZlSIqYAkb_3udmZjdnDkKzmERMcE4W4B_1PUoYoVFMU87HKC_wanDuiYuhbxvojcZHB71tfYPfgZd3cAP09fWCT-ZU7HHp266T4LsJGllwnZn-O0Dn1fJcbsLdYb0ti10IacZD9cYYaYS2hudgGSNWqCxJBXDNKNiEmFhJpVKqM5ASgNosJkxoIyjJraQBmv9mv9-rm68b8M_q41B9HegLxXZBwA</recordid><startdate>20240320</startdate><enddate>20240320</enddate><creator>Pelke, Rebecca</creator><creator>Staudigl, Felix</creator><creator>Thomas, Niklas</creator><creator>Bosbach, Nils</creator><creator>Hossein, Mohammed</creator><creator>Cubero-Cascante, Jose</creator><creator>Poehls, Leticia Bolzani</creator><creator>Leupers, Rainer</creator><creator>Joseph, Jan Moritz</creator><scope>AKY</scope><scope>GOX</scope></search><sort><creationdate>20240320</creationdate><title>A Fully Automated Platform for Evaluating ReRAM Crossbars</title><author>Pelke, Rebecca ; Staudigl, Felix ; Thomas, Niklas ; Bosbach, Nils ; Hossein, Mohammed ; Cubero-Cascante, Jose ; Poehls, Leticia Bolzani ; Leupers, Rainer ; Joseph, Jan Moritz</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a675-c365ebe8dfe59af440f8c7268a5d43af20e1cbcc63d7abbaa3f71048de8309fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Computer Science - Emerging Technologies</topic><toplevel>online_resources</toplevel><creatorcontrib>Pelke, Rebecca</creatorcontrib><creatorcontrib>Staudigl, Felix</creatorcontrib><creatorcontrib>Thomas, Niklas</creatorcontrib><creatorcontrib>Bosbach, Nils</creatorcontrib><creatorcontrib>Hossein, Mohammed</creatorcontrib><creatorcontrib>Cubero-Cascante, Jose</creatorcontrib><creatorcontrib>Poehls, Leticia Bolzani</creatorcontrib><creatorcontrib>Leupers, Rainer</creatorcontrib><creatorcontrib>Joseph, Jan Moritz</creatorcontrib><collection>arXiv Computer Science</collection><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pelke, Rebecca</au><au>Staudigl, Felix</au><au>Thomas, Niklas</au><au>Bosbach, Nils</au><au>Hossein, Mohammed</au><au>Cubero-Cascante, Jose</au><au>Poehls, Leticia Bolzani</au><au>Leupers, Rainer</au><au>Joseph, Jan Moritz</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Fully Automated Platform for Evaluating ReRAM Crossbars</atitle><date>2024-03-20</date><risdate>2024</risdate><abstract>Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices, algorithms, and applications. To achieve this, understanding the stochastic behavior of the different ReRAM technologies is essential. The NeuroBreakoutBoard (NBB) is a versatile instrumentation platform to characterize Non-Volatile Memories (NVMs). However, the NBB itself does not provide any functionality in the form of software or a controller. In this paper, we present a control board for the NBB able to perform reliability assessments of 1T1R ReRAM crossbars. In more detail, an interface that allows a host PC to communicate with the NBB via the new control board is implemented. In a case study, we analyze the Cycle-to-Cycle (C2C) variation and read disturb TiN/Ti/HfO2/TiN cells for different read voltages to gain an understanding of their operational behavior.</abstract><doi>10.48550/arxiv.2403.13655</doi><oa>free_for_read</oa></addata></record>
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title A Fully Automated Platform for Evaluating ReRAM Crossbars
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-31T00%3A05%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-arxiv_GOX&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Fully%20Automated%20Platform%20for%20Evaluating%20ReRAM%20Crossbars&rft.au=Pelke,%20Rebecca&rft.date=2024-03-20&rft_id=info:doi/10.48550/arxiv.2403.13655&rft_dat=%3Carxiv_GOX%3E2403_13655%3C/arxiv_GOX%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true