Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes
This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al...
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| creator | Cho, Sinwoo Barrera, Omar Simeoni, Pietro Wang, Ellie Y Kramer, Jack Chulukhadze, Vakhtang Campbell, Joshua Rinaldi, Matteo Lu, Ruochen |
| description | This work describes sputtered scandium aluminum nitride (ScAlN) thin-film
bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality
factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and
aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt
bottom, and Pt top Pt bottom, are built to study the impact of electrodes on
mmWave FBARs. The demonstrated FBAR with Pt top and bottom electrodes achieve
electromechanical coupling (k2) of 4.0% and Q of 116 for the first-order
symmetric (S1) mode at 13.7 GHz, and k2 of 1.8% and Q of 94 for third-order
symmetric (S3) mode at 61.6 GHz. Through these results, we confirmed that even
in the frequency band of approximately 60 GHz, ScAlN FBAR can achieve a Q
factor approaching 100 with optimized fabrication and acoustic/EM design.
Further development calls for stacks with better quality in piezoelectric and
metallic layers. |
| doi_str_mv | 10.48550/arxiv.2311.13448 |
| format | Article |
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bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality
factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and
aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt
bottom, and Pt top Pt bottom, are built to study the impact of electrodes on
mmWave FBARs. The demonstrated FBAR with Pt top and bottom electrodes achieve
electromechanical coupling (k2) of 4.0% and Q of 116 for the first-order
symmetric (S1) mode at 13.7 GHz, and k2 of 1.8% and Q of 94 for third-order
symmetric (S3) mode at 61.6 GHz. Through these results, we confirmed that even
in the frequency band of approximately 60 GHz, ScAlN FBAR can achieve a Q
factor approaching 100 with optimized fabrication and acoustic/EM design.
Further development calls for stacks with better quality in piezoelectric and
metallic layers.</description><identifier>DOI: 10.48550/arxiv.2311.13448</identifier><language>eng</language><creationdate>2023-11</creationdate><rights>http://creativecommons.org/licenses/by/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,778,883</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2311.13448$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.1109/MEMS58180.2024.10439299$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.2311.13448$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Cho, Sinwoo</creatorcontrib><creatorcontrib>Barrera, Omar</creatorcontrib><creatorcontrib>Simeoni, Pietro</creatorcontrib><creatorcontrib>Wang, Ellie Y</creatorcontrib><creatorcontrib>Kramer, Jack</creatorcontrib><creatorcontrib>Chulukhadze, Vakhtang</creatorcontrib><creatorcontrib>Campbell, Joshua</creatorcontrib><creatorcontrib>Rinaldi, Matteo</creatorcontrib><creatorcontrib>Lu, Ruochen</creatorcontrib><title>Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes</title><description>This work describes sputtered scandium aluminum nitride (ScAlN) thin-film
bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality
factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and
aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt
bottom, and Pt top Pt bottom, are built to study the impact of electrodes on
mmWave FBARs. The demonstrated FBAR with Pt top and bottom electrodes achieve
electromechanical coupling (k2) of 4.0% and Q of 116 for the first-order
symmetric (S1) mode at 13.7 GHz, and k2 of 1.8% and Q of 94 for third-order
symmetric (S3) mode at 61.6 GHz. Through these results, we confirmed that even
in the frequency band of approximately 60 GHz, ScAlN FBAR can achieve a Q
factor approaching 100 with optimized fabrication and acoustic/EM design.
Further development calls for stacks with better quality in piezoelectric and
metallic layers.</description><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj0FOwzAURL1hgQoHYIUvkBDHduIsQ9UCUguIBrGMHPsHvnCcynEquD2lsJrRSG-kR8gVy1KhpMxudPjCQ5pzxlLGhVDnJGzRORwgQqBv-gC0-UCfrNEN9HZ2n7Q24zxFNPQFptHrOAaKnu72czwSYOnOaG9xHmjt5gH9sTxiDGiBvk7o3-mz0_E0rxyYGEYL0wU567Wb4PI_F6RZr5rlfbJ5untY1ptEF6VKOjDcijw3eamhyiyzRoqOlaXqIatyU_JCASu4FMpwrjqArpfWWJkrXiko-IJc_92epNt9wEGH7_ZXvj3J8x_PqlaI</recordid><startdate>20231122</startdate><enddate>20231122</enddate><creator>Cho, Sinwoo</creator><creator>Barrera, Omar</creator><creator>Simeoni, Pietro</creator><creator>Wang, Ellie Y</creator><creator>Kramer, Jack</creator><creator>Chulukhadze, Vakhtang</creator><creator>Campbell, Joshua</creator><creator>Rinaldi, Matteo</creator><creator>Lu, Ruochen</creator><scope>GOX</scope></search><sort><creationdate>20231122</creationdate><title>Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes</title><author>Cho, Sinwoo ; Barrera, Omar ; Simeoni, Pietro ; Wang, Ellie Y ; Kramer, Jack ; Chulukhadze, Vakhtang ; Campbell, Joshua ; Rinaldi, Matteo ; Lu, Ruochen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a678-bec3d422c27ae90d1dc54b1778fe092c7368e163548c338beebf5dcd528398e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Cho, Sinwoo</creatorcontrib><creatorcontrib>Barrera, Omar</creatorcontrib><creatorcontrib>Simeoni, Pietro</creatorcontrib><creatorcontrib>Wang, Ellie Y</creatorcontrib><creatorcontrib>Kramer, Jack</creatorcontrib><creatorcontrib>Chulukhadze, Vakhtang</creatorcontrib><creatorcontrib>Campbell, Joshua</creatorcontrib><creatorcontrib>Rinaldi, Matteo</creatorcontrib><creatorcontrib>Lu, Ruochen</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cho, Sinwoo</au><au>Barrera, Omar</au><au>Simeoni, Pietro</au><au>Wang, Ellie Y</au><au>Kramer, Jack</au><au>Chulukhadze, Vakhtang</au><au>Campbell, Joshua</au><au>Rinaldi, Matteo</au><au>Lu, Ruochen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes</atitle><date>2023-11-22</date><risdate>2023</risdate><abstract>This work describes sputtered scandium aluminum nitride (ScAlN) thin-film
bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality
factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and
aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt
bottom, and Pt top Pt bottom, are built to study the impact of electrodes on
mmWave FBARs. The demonstrated FBAR with Pt top and bottom electrodes achieve
electromechanical coupling (k2) of 4.0% and Q of 116 for the first-order
symmetric (S1) mode at 13.7 GHz, and k2 of 1.8% and Q of 94 for third-order
symmetric (S3) mode at 61.6 GHz. Through these results, we confirmed that even
in the frequency band of approximately 60 GHz, ScAlN FBAR can achieve a Q
factor approaching 100 with optimized fabrication and acoustic/EM design.
Further development calls for stacks with better quality in piezoelectric and
metallic layers.</abstract><doi>10.48550/arxiv.2311.13448</doi><oa>free_for_read</oa></addata></record> |
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| title | Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes |
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