Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect formatio...
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| creator | Lauer, Kevin Reiß, Stephanie Flötotto, Aaron Peh, Katharina Bratek, Dominik Müller, Robin Schulze, Dirk Beenken, Wichard Hiller, Erik Ortlepp, Thomas Krischok, Stefan |
| description | The acceptor removal phenomenon (ARP), which hampers the functionality of
low-gain avalanche detectors (LGAD), is discussed in frame of the
A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial
silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect
formation under irradiation, particular at very low temperatures. The
experimentally observed properties of the ARP are explained by the donor
properties of the B_Si-Si_i-defect in its ground state. Additionally, low
temperature photoluminescence spectra are reported for quenched boron doped
silicon showing so far unidentified PL lines, which change due to well-known
light-induced degradation (LID) treatments. |
| doi_str_mv | 10.48550/arxiv.2311.07280 |
| format | Article |
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low-gain avalanche detectors (LGAD), is discussed in frame of the
A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial
silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect
formation under irradiation, particular at very low temperatures. The
experimentally observed properties of the ARP are explained by the donor
properties of the B_Si-Si_i-defect in its ground state. Additionally, low
temperature photoluminescence spectra are reported for quenched boron doped
silicon showing so far unidentified PL lines, which change due to well-known
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low-gain avalanche detectors (LGAD), is discussed in frame of the
A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial
silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect
formation under irradiation, particular at very low temperatures. The
experimentally observed properties of the ARP are explained by the donor
properties of the B_Si-Si_i-defect in its ground state. Additionally, low
temperature photoluminescence spectra are reported for quenched boron doped
silicon showing so far unidentified PL lines, which change due to well-known
light-induced degradation (LID) treatments.</description><subject>Physics - Instrumentation and Detectors</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj81qwzAQhHXpoaR9gJ6qF5ArWVlJPYaQ_kCgh-Ru1tKqEShWsE2avH0dt6eZYZiBj7EnJaulA5Av2F_Suaq1UpW0tZP37LCJkfzIS-Spo4zDmDxPpeO-5JyGyQ18Srn8iG9MHcczZuz8gXigcRqWfuB0OeWpo8DbK8eOr5pdErvUJBFoPj-WQA_sLmIe6PFfF2z_ttmvP8T26_1zvdoKNFYKZy06pW0AqyC24EFqKXW4GTKOINQRo_ShVi4EaF8xmmCAwCC4aGq9YM9_tzNqc-rTEftrc0NuZmT9C5IiUgM</recordid><startdate>20231113</startdate><enddate>20231113</enddate><creator>Lauer, Kevin</creator><creator>Reiß, Stephanie</creator><creator>Flötotto, Aaron</creator><creator>Peh, Katharina</creator><creator>Bratek, Dominik</creator><creator>Müller, Robin</creator><creator>Schulze, Dirk</creator><creator>Beenken, Wichard</creator><creator>Hiller, Erik</creator><creator>Ortlepp, Thomas</creator><creator>Krischok, Stefan</creator><scope>GOX</scope></search><sort><creationdate>20231113</creationdate><title>Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode</title><author>Lauer, Kevin ; Reiß, Stephanie ; Flötotto, Aaron ; Peh, Katharina ; Bratek, Dominik ; Müller, Robin ; Schulze, Dirk ; Beenken, Wichard ; Hiller, Erik ; Ortlepp, Thomas ; Krischok, Stefan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a670-877a8137d5715fb5c503003d5c50e68e5d2faf0cd218dd5b9af6d65e56a58f623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Physics - Instrumentation and Detectors</topic><toplevel>online_resources</toplevel><creatorcontrib>Lauer, Kevin</creatorcontrib><creatorcontrib>Reiß, Stephanie</creatorcontrib><creatorcontrib>Flötotto, Aaron</creatorcontrib><creatorcontrib>Peh, Katharina</creatorcontrib><creatorcontrib>Bratek, Dominik</creatorcontrib><creatorcontrib>Müller, Robin</creatorcontrib><creatorcontrib>Schulze, Dirk</creatorcontrib><creatorcontrib>Beenken, Wichard</creatorcontrib><creatorcontrib>Hiller, Erik</creatorcontrib><creatorcontrib>Ortlepp, Thomas</creatorcontrib><creatorcontrib>Krischok, Stefan</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lauer, Kevin</au><au>Reiß, Stephanie</au><au>Flötotto, Aaron</au><au>Peh, Katharina</au><au>Bratek, Dominik</au><au>Müller, Robin</au><au>Schulze, Dirk</au><au>Beenken, Wichard</au><au>Hiller, Erik</au><au>Ortlepp, Thomas</au><au>Krischok, Stefan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode</atitle><date>2023-11-13</date><risdate>2023</risdate><abstract>The acceptor removal phenomenon (ARP), which hampers the functionality of
low-gain avalanche detectors (LGAD), is discussed in frame of the
A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial
silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect
formation under irradiation, particular at very low temperatures. The
experimentally observed properties of the ARP are explained by the donor
properties of the B_Si-Si_i-defect in its ground state. Additionally, low
temperature photoluminescence spectra are reported for quenched boron doped
silicon showing so far unidentified PL lines, which change due to well-known
light-induced degradation (LID) treatments.</abstract><doi>10.48550/arxiv.2311.07280</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Physics - Instrumentation and Detectors |
| title | Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode |
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