Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature

Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstra...

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Hauptverfasser:	Hautzinger, Matthew P, Pan, Xin, Hayden, Steven C, Ye, Jiselle Y, Jiang, Qi, Wilson, Mickey J, Dong, Yifan, Raulerson, Emily K, Leahy, Ian A, Jiang, Chun-Sheng, Luther, Joseph M, Lu, Yuan, Jungjohann, Katherine, Vardeny, Z. Valy, Berry, Joseph J, Alberi, Kirstin, Beard, Matthew C
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Applied Physics Physics - Materials Science
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