Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature
Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstra...
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| creator | Hautzinger, Matthew P Pan, Xin Hayden, Steven C Ye, Jiselle Y Jiang, Qi Wilson, Mickey J Dong, Yifan Raulerson, Emily K Leahy, Ian A Jiang, Chun-Sheng Luther, Joseph M Lu, Yuan Jungjohann, Katherine Vardeny, Z. Valy Berry, Joseph J Alberi, Kirstin Beard, Matthew C |
| description | Spin accumulation in semiconductor structures at room temperature and without
magnetic fields is key to enable a broader range of opto-electronic
functionality. Current efforts are limited due to inherent inefficiencies
associated with spin injection into semiconductor structures. Here, we
demonstrate spin injection across chiral halide perovskite/III-V interfaces
achieving spin accumulation in a standard semiconductor III-V
(AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The
spin accumulation in the MQW is detected via emission of circularly polarized
light with a degree of polarization of up to ~15%. The chiral perovskite/III-V
interface was characterized with X-ray photoemission spectroscopy (XPS), cross
sectional scanning Kelvin probe force microscopy, and cross section
transmission electron microscopy (TEM) imaging, showing a clean
semiconductor/semiconductor interface where the fermi-level can equilibrate.
These findings demonstrate chiral perovskite semiconductors can transform
well-developed semiconductor platforms to ones that can also control spin. |
| doi_str_mv | 10.48550/arxiv.2309.04559 |
| format | Article |
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magnetic fields is key to enable a broader range of opto-electronic
functionality. Current efforts are limited due to inherent inefficiencies
associated with spin injection into semiconductor structures. Here, we
demonstrate spin injection across chiral halide perovskite/III-V interfaces
achieving spin accumulation in a standard semiconductor III-V
(AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The
spin accumulation in the MQW is detected via emission of circularly polarized
light with a degree of polarization of up to ~15%. The chiral perovskite/III-V
interface was characterized with X-ray photoemission spectroscopy (XPS), cross
sectional scanning Kelvin probe force microscopy, and cross section
transmission electron microscopy (TEM) imaging, showing a clean
semiconductor/semiconductor interface where the fermi-level can equilibrate.
These findings demonstrate chiral perovskite semiconductors can transform
well-developed semiconductor platforms to ones that can also control spin.</description><identifier>DOI: 10.48550/arxiv.2309.04559</identifier><language>eng</language><subject>Physics - Applied Physics ; Physics - Materials Science</subject><creationdate>2023-09</creationdate><rights>http://creativecommons.org/licenses/by-nc-nd/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,881</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2309.04559$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2309.04559$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Hautzinger, Matthew P</creatorcontrib><creatorcontrib>Pan, Xin</creatorcontrib><creatorcontrib>Hayden, Steven C</creatorcontrib><creatorcontrib>Ye, Jiselle Y</creatorcontrib><creatorcontrib>Jiang, Qi</creatorcontrib><creatorcontrib>Wilson, Mickey J</creatorcontrib><creatorcontrib>Dong, Yifan</creatorcontrib><creatorcontrib>Raulerson, Emily K</creatorcontrib><creatorcontrib>Leahy, Ian A</creatorcontrib><creatorcontrib>Jiang, Chun-Sheng</creatorcontrib><creatorcontrib>Luther, Joseph M</creatorcontrib><creatorcontrib>Lu, Yuan</creatorcontrib><creatorcontrib>Jungjohann, Katherine</creatorcontrib><creatorcontrib>Vardeny, Z. Valy</creatorcontrib><creatorcontrib>Berry, Joseph J</creatorcontrib><creatorcontrib>Alberi, Kirstin</creatorcontrib><creatorcontrib>Beard, Matthew C</creatorcontrib><title>Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature</title><description>Spin accumulation in semiconductor structures at room temperature and without
magnetic fields is key to enable a broader range of opto-electronic
functionality. Current efforts are limited due to inherent inefficiencies
associated with spin injection into semiconductor structures. Here, we
demonstrate spin injection across chiral halide perovskite/III-V interfaces
achieving spin accumulation in a standard semiconductor III-V
(AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The
spin accumulation in the MQW is detected via emission of circularly polarized
light with a degree of polarization of up to ~15%. The chiral perovskite/III-V
interface was characterized with X-ray photoemission spectroscopy (XPS), cross
sectional scanning Kelvin probe force microscopy, and cross section
transmission electron microscopy (TEM) imaging, showing a clean
semiconductor/semiconductor interface where the fermi-level can equilibrate.
These findings demonstrate chiral perovskite semiconductors can transform
well-developed semiconductor platforms to ones that can also control spin.</description><subject>Physics - Applied Physics</subject><subject>Physics - Materials Science</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj7tOwzAYRr0woMIDMOEXSOr4guMRVVwiVWKgYo1-23-oIXEix6ng7emF6VvOd6RDyF3FSlkrxdaQfsKh5IKZkkmlzDXZv08h0hC_0OUwRgoujfNMgTZNU3ys3T4k6OmEaTzM3yHjEc2YOnBIMYLtQ_yk80kBzi3D0sPFkmkax4FmHI5XyEvCG3LVQT_j7f-uyO75abd5LbZvL83mcVvAgzaFFJyjsh2vWM0lN9J6zn3tmPWIVnrQzNbWGyGVUFprVSnmO828r0zthBcrcn_RnlPbKYUB0m97Sm7PyeIPD8JSyw</recordid><startdate>20230908</startdate><enddate>20230908</enddate><creator>Hautzinger, Matthew P</creator><creator>Pan, Xin</creator><creator>Hayden, Steven C</creator><creator>Ye, Jiselle Y</creator><creator>Jiang, Qi</creator><creator>Wilson, Mickey J</creator><creator>Dong, Yifan</creator><creator>Raulerson, Emily K</creator><creator>Leahy, Ian A</creator><creator>Jiang, Chun-Sheng</creator><creator>Luther, Joseph M</creator><creator>Lu, Yuan</creator><creator>Jungjohann, Katherine</creator><creator>Vardeny, Z. Valy</creator><creator>Berry, Joseph J</creator><creator>Alberi, Kirstin</creator><creator>Beard, Matthew C</creator><scope>GOX</scope></search><sort><creationdate>20230908</creationdate><title>Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature</title><author>Hautzinger, Matthew P ; Pan, Xin ; Hayden, Steven C ; Ye, Jiselle Y ; Jiang, Qi ; Wilson, Mickey J ; Dong, Yifan ; Raulerson, Emily K ; Leahy, Ian A ; Jiang, Chun-Sheng ; Luther, Joseph M ; Lu, Yuan ; Jungjohann, Katherine ; Vardeny, Z. Valy ; Berry, Joseph J ; Alberi, Kirstin ; Beard, Matthew C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a679-4322e5bf210824294bd22d8c0bdeeb4da70b8bd9345357775150df70dd198c3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Physics - Applied Physics</topic><topic>Physics - Materials Science</topic><toplevel>online_resources</toplevel><creatorcontrib>Hautzinger, Matthew P</creatorcontrib><creatorcontrib>Pan, Xin</creatorcontrib><creatorcontrib>Hayden, Steven C</creatorcontrib><creatorcontrib>Ye, Jiselle Y</creatorcontrib><creatorcontrib>Jiang, Qi</creatorcontrib><creatorcontrib>Wilson, Mickey J</creatorcontrib><creatorcontrib>Dong, Yifan</creatorcontrib><creatorcontrib>Raulerson, Emily K</creatorcontrib><creatorcontrib>Leahy, Ian A</creatorcontrib><creatorcontrib>Jiang, Chun-Sheng</creatorcontrib><creatorcontrib>Luther, Joseph M</creatorcontrib><creatorcontrib>Lu, Yuan</creatorcontrib><creatorcontrib>Jungjohann, Katherine</creatorcontrib><creatorcontrib>Vardeny, Z. Valy</creatorcontrib><creatorcontrib>Berry, Joseph J</creatorcontrib><creatorcontrib>Alberi, Kirstin</creatorcontrib><creatorcontrib>Beard, Matthew C</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hautzinger, Matthew P</au><au>Pan, Xin</au><au>Hayden, Steven C</au><au>Ye, Jiselle Y</au><au>Jiang, Qi</au><au>Wilson, Mickey J</au><au>Dong, Yifan</au><au>Raulerson, Emily K</au><au>Leahy, Ian A</au><au>Jiang, Chun-Sheng</au><au>Luther, Joseph M</au><au>Lu, Yuan</au><au>Jungjohann, Katherine</au><au>Vardeny, Z. Valy</au><au>Berry, Joseph J</au><au>Alberi, Kirstin</au><au>Beard, Matthew C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature</atitle><date>2023-09-08</date><risdate>2023</risdate><abstract>Spin accumulation in semiconductor structures at room temperature and without
magnetic fields is key to enable a broader range of opto-electronic
functionality. Current efforts are limited due to inherent inefficiencies
associated with spin injection into semiconductor structures. Here, we
demonstrate spin injection across chiral halide perovskite/III-V interfaces
achieving spin accumulation in a standard semiconductor III-V
(AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The
spin accumulation in the MQW is detected via emission of circularly polarized
light with a degree of polarization of up to ~15%. The chiral perovskite/III-V
interface was characterized with X-ray photoemission spectroscopy (XPS), cross
sectional scanning Kelvin probe force microscopy, and cross section
transmission electron microscopy (TEM) imaging, showing a clean
semiconductor/semiconductor interface where the fermi-level can equilibrate.
These findings demonstrate chiral perovskite semiconductors can transform
well-developed semiconductor platforms to ones that can also control spin.</abstract><doi>10.48550/arxiv.2309.04559</doi><oa>free_for_read</oa></addata></record> |
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| title | Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature |
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