Loss Measurement of Low RDS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is based on the transistor current regulation with low gate voltag...
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| creator | Sanz-Alcaine, Jose Miguel Perez-Cebolla, Francisco Jose Bernal-Ruiz, Carlos Arruti, Asier Aizpuru, Iosu Sanchez, Juan |
| description | This paper presents and evaluates a novel method for generating power losses
on transistors avoiding high currents. These could heat up the circuit tracks,
affecting the accurate thermal modeling of the system. The proposed procedure
is based on the transistor current regulation with low gate voltages and the
linearity between power and temperature, being useful for all transistor
technologies (Si, SiC and GaN). Through this method, low DC currents are enough
to bring transistors to their thermal limits. Thermal stability issues and
their differences between technologies are discussed and an experimental
validation of the method is carried out. |
| doi_str_mv | 10.48550/arxiv.2308.12685 |
| format | Article |
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on transistors avoiding high currents. These could heat up the circuit tracks,
affecting the accurate thermal modeling of the system. The proposed procedure
is based on the transistor current regulation with low gate voltages and the
linearity between power and temperature, being useful for all transistor
technologies (Si, SiC and GaN). Through this method, low DC currents are enough
to bring transistors to their thermal limits. Thermal stability issues and
their differences between technologies are discussed and an experimental
validation of the method is carried out.</description><identifier>DOI: 10.48550/arxiv.2308.12685</identifier><language>eng</language><subject>Computer Science - Systems and Control</subject><creationdate>2023-08</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,881</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2308.12685$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2308.12685$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Sanz-Alcaine, Jose Miguel</creatorcontrib><creatorcontrib>Perez-Cebolla, Francisco Jose</creatorcontrib><creatorcontrib>Bernal-Ruiz, Carlos</creatorcontrib><creatorcontrib>Arruti, Asier</creatorcontrib><creatorcontrib>Aizpuru, Iosu</creatorcontrib><creatorcontrib>Sanchez, Juan</creatorcontrib><title>Loss Measurement of Low RDS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On</title><description>This paper presents and evaluates a novel method for generating power losses
on transistors avoiding high currents. These could heat up the circuit tracks,
affecting the accurate thermal modeling of the system. The proposed procedure
is based on the transistor current regulation with low gate voltages and the
linearity between power and temperature, being useful for all transistor
technologies (Si, SiC and GaN). Through this method, low DC currents are enough
to bring transistors to their thermal limits. Thermal stability issues and
their differences between technologies are discussed and an experimental
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on transistors avoiding high currents. These could heat up the circuit tracks,
affecting the accurate thermal modeling of the system. The proposed procedure
is based on the transistor current regulation with low gate voltages and the
linearity between power and temperature, being useful for all transistor
technologies (Si, SiC and GaN). Through this method, low DC currents are enough
to bring transistors to their thermal limits. Thermal stability issues and
their differences between technologies are discussed and an experimental
validation of the method is carried out.</abstract><doi>10.48550/arxiv.2308.12685</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Computer Science - Systems and Control |
| title | Loss Measurement of Low RDS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On |
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