Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor

We conduct comparative research on the density of states of electron- and hole- carrier trap levels (DTR(E)), dispersing inside the energy gap of a rubrene single crystal in a field effect transistor (FET) struction with Ca and Au hetero-electrodes for an ambipolar carrier injection mode, by using p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Zhou, Hua-Xue, Yang, Chong-Li, Li, Shi-Lin, Kobayashi, Shota, Yao, Qifeng, Tanigaki, Katsumi, Shimotani, Hidekazu
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!