Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor
We conduct comparative research on the density of states of electron- and hole- carrier trap levels (DTR(E)), dispersing inside the energy gap of a rubrene single crystal in a field effect transistor (FET) struction with Ca and Au hetero-electrodes for an ambipolar carrier injection mode, by using p...
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| creator | Zhou, Hua-Xue Yang, Chong-Li Li, Shi-Lin Kobayashi, Shota Yao, Qifeng Tanigaki, Katsumi Shimotani, Hidekazu |
| description | We conduct comparative research on the density of states of electron- and
hole- carrier trap levels (DTR(E)), dispersing inside the energy gap of a
rubrene single crystal in a field effect transistor (FET) struction with Ca and
Au hetero-electrodes for an ambipolar carrier injection mode, by using
polymeric protection-layer materials on a Si substrate. Three different types
of polymeric materials, poly(methyl-methacrylate) (PMMA), poly(styrene) (PS)
and poly(chloro-styrene) (PCS) are employed. From the temperature (T)-dependent
source-drain current and gate voltage (ISD-VG) transfer characteristics, the
values of DTR(E) are evaluated. PS exhibits the most efficiently-balanced
ambipolar carrier transport, which is superior to PMMA that is most typically
used as the standard protection layer on a SiO$_2$/doped-Si substrate.
Discussions are made in the framework of a carrier multiple trap and release
(CMTR) model. |
| doi_str_mv | 10.48550/arxiv.2308.06903 |
| format | Article |
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hole- carrier trap levels (DTR(E)), dispersing inside the energy gap of a
rubrene single crystal in a field effect transistor (FET) struction with Ca and
Au hetero-electrodes for an ambipolar carrier injection mode, by using
polymeric protection-layer materials on a Si substrate. Three different types
of polymeric materials, poly(methyl-methacrylate) (PMMA), poly(styrene) (PS)
and poly(chloro-styrene) (PCS) are employed. From the temperature (T)-dependent
source-drain current and gate voltage (ISD-VG) transfer characteristics, the
values of DTR(E) are evaluated. PS exhibits the most efficiently-balanced
ambipolar carrier transport, which is superior to PMMA that is most typically
used as the standard protection layer on a SiO$_2$/doped-Si substrate.
Discussions are made in the framework of a carrier multiple trap and release
(CMTR) model.</description><identifier>DOI: 10.48550/arxiv.2308.06903</identifier><language>eng</language><subject>Physics - Materials Science</subject><creationdate>2023-08</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2308.06903$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2308.06903$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhou, Hua-Xue</creatorcontrib><creatorcontrib>Yang, Chong-Li</creatorcontrib><creatorcontrib>Li, Shi-Lin</creatorcontrib><creatorcontrib>Kobayashi, Shota</creatorcontrib><creatorcontrib>Yao, Qifeng</creatorcontrib><creatorcontrib>Tanigaki, Katsumi</creatorcontrib><creatorcontrib>Shimotani, Hidekazu</creatorcontrib><title>Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor</title><description>We conduct comparative research on the density of states of electron- and
hole- carrier trap levels (DTR(E)), dispersing inside the energy gap of a
rubrene single crystal in a field effect transistor (FET) struction with Ca and
Au hetero-electrodes for an ambipolar carrier injection mode, by using
polymeric protection-layer materials on a Si substrate. Three different types
of polymeric materials, poly(methyl-methacrylate) (PMMA), poly(styrene) (PS)
and poly(chloro-styrene) (PCS) are employed. From the temperature (T)-dependent
source-drain current and gate voltage (ISD-VG) transfer characteristics, the
values of DTR(E) are evaluated. PS exhibits the most efficiently-balanced
ambipolar carrier transport, which is superior to PMMA that is most typically
used as the standard protection layer on a SiO$_2$/doped-Si substrate.
Discussions are made in the framework of a carrier multiple trap and release
(CMTR) model.</description><subject>Physics - Materials Science</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotkDtPwzAUhbMwoMIPYOIOHWBIcOLEjxFVvKRKHdo9uvGjsuQmke0gsvHTSUunM5xzvuHLsoeSFLVoGvKC4cd9FxUloiBMEnqb_e6n0QQ3BIhTsKgMnAbtrFOY3NCDx9kEGCyMg5-fYpqD6c0zLM3e7dZttYYjJgOuj5PHtFBcD2HqziuIrj96AyrMMaEH64zXubHWqAQpYB9dXB532Y1FH839NVfZ4f3tsPnMt7uPr83rNkfGaV4i4dyyRkorREd4qSrCOEPdcUo7KZAqZitkmkhWa2FrIpWhTDedLokijK6yx3_sRUE7BnfCMLdnFe1FBf0DduZbYQ</recordid><startdate>20230813</startdate><enddate>20230813</enddate><creator>Zhou, Hua-Xue</creator><creator>Yang, Chong-Li</creator><creator>Li, Shi-Lin</creator><creator>Kobayashi, Shota</creator><creator>Yao, Qifeng</creator><creator>Tanigaki, Katsumi</creator><creator>Shimotani, Hidekazu</creator><scope>GOX</scope></search><sort><creationdate>20230813</creationdate><title>Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor</title><author>Zhou, Hua-Xue ; Yang, Chong-Li ; Li, Shi-Lin ; Kobayashi, Shota ; Yao, Qifeng ; Tanigaki, Katsumi ; Shimotani, Hidekazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a673-1a077f6599f88b071c20676adb733b98a3c6f2a6d0964d8f409ce36d5bd10c063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Physics - Materials Science</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Hua-Xue</creatorcontrib><creatorcontrib>Yang, Chong-Li</creatorcontrib><creatorcontrib>Li, Shi-Lin</creatorcontrib><creatorcontrib>Kobayashi, Shota</creatorcontrib><creatorcontrib>Yao, Qifeng</creatorcontrib><creatorcontrib>Tanigaki, Katsumi</creatorcontrib><creatorcontrib>Shimotani, Hidekazu</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhou, Hua-Xue</au><au>Yang, Chong-Li</au><au>Li, Shi-Lin</au><au>Kobayashi, Shota</au><au>Yao, Qifeng</au><au>Tanigaki, Katsumi</au><au>Shimotani, Hidekazu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor</atitle><date>2023-08-13</date><risdate>2023</risdate><abstract>We conduct comparative research on the density of states of electron- and
hole- carrier trap levels (DTR(E)), dispersing inside the energy gap of a
rubrene single crystal in a field effect transistor (FET) struction with Ca and
Au hetero-electrodes for an ambipolar carrier injection mode, by using
polymeric protection-layer materials on a Si substrate. Three different types
of polymeric materials, poly(methyl-methacrylate) (PMMA), poly(styrene) (PS)
and poly(chloro-styrene) (PCS) are employed. From the temperature (T)-dependent
source-drain current and gate voltage (ISD-VG) transfer characteristics, the
values of DTR(E) are evaluated. PS exhibits the most efficiently-balanced
ambipolar carrier transport, which is superior to PMMA that is most typically
used as the standard protection layer on a SiO$_2$/doped-Si substrate.
Discussions are made in the framework of a carrier multiple trap and release
(CMTR) model.</abstract><doi>10.48550/arxiv.2308.06903</doi><oa>free_for_read</oa></addata></record> |
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| title | Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor |
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