Gas dependent hysteresis in MoS$_2$ field effect transistors

2019 2D Materials 6 045049 We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the...

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Hauptverfasser:	Urban, F, Giubileo, F, Grillo, A, Iemmo, L, Luongo, G, Passacantando, M, Foller, T, Madauß, L, Pollmann, E, Geller, M. P, Oing, D, Schleberger, M, Di Bartolomeo, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Mesoscale and Nanoscale Physics
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