Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and stud...

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Veröffentlicht in:	arXiv.org 2023-04
Hauptverfasser:	Longo, E, Locatelli, L, Tsipas, P, Lintzeris, A, Dimoulas, A, Fanciulli, M, Longo, M, Mantovan, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony telluride Bismuth tellurides Electron spin Electron transport Fermi level Fermi surfaces Ferromagnetic resonance Ferromagnetism Heterostructures Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Photoelectric emission Physics - Materials Science Physics - Other Condensed Matter Room temperature Silicon substrates Technology transfer Topological insulators Tuning
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