Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators
Two-dimensional (2D) materials provide a platform for developing novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity...
Gespeichert in:
Veröffentlicht in: | arXiv.org 2023-04 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | arXiv.org |
container_volume | |
creator | Junxiong Hua Luo, Jiangbo Zheng, Yuntian Chen, Jiayu Ganesh Ji Omar Shen Wee, Andrew Thye Ariando, A |
description | Two-dimensional (2D) materials provide a platform for developing novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity effect at the interface of 2D materials and magnetic oxide insulators. We highlight the unique spin-related phenomena arising from magnetic exchange interaction and spin-orbital coupling in 2D materials coupled with magnetic oxides. We also describe the fabrication of multifunctional hybrid devices based on spin transport. We conclude with a perspective of the field and highlight challenges for the design and fabrication of 2D spintronic devices and their potential applications in information storage and logic devices. |
doi_str_mv | 10.48550/arxiv.2304.00356 |
format | Article |
fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_2304_00356</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2795080728</sourcerecordid><originalsourceid>FETCH-LOGICAL-a528-7b6462dc43cc409be5304dfbb7c69f71c07f35acffac03711e24c231d5fe4a073</originalsourceid><addsrcrecordid>eNotkElPwzAQhS0kJKrSH8AJS5wTJl7i9IgqNqmIS-_RxLHBVZZiO9D-e9zlNBrN957mPULuCshFJSU8ot-735xxEDkAl-UVmTHOi6wSjN2QRQhbAGClYlLyGTEf-DWY6DTd-XHvehcP1FhrdKQYafw21A3ReIva0NHS-DdmrevNENw4YEd7TEeHXaA4tGm7eCWn9qgMU4dx9OGWXNsEmcVlzsnm5XmzesvWn6_vq6d1hpJVmWpKUbJWC661gGVjZArR2qZRulxaVWhQlkvUNn0DXBWFYUIzXrTSGoGg-Jzcn21PHdQ773r0h_rYRX3qIhEPZyKl_ZlMiPV2nHxKEmqmlhIqUKzi_1R1Y6s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2795080728</pqid></control><display><type>article</type><title>Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Junxiong Hua ; Luo, Jiangbo ; Zheng, Yuntian ; Chen, Jiayu ; Ganesh Ji Omar ; Shen Wee, Andrew Thye ; Ariando, A</creator><creatorcontrib>Junxiong Hua ; Luo, Jiangbo ; Zheng, Yuntian ; Chen, Jiayu ; Ganesh Ji Omar ; Shen Wee, Andrew Thye ; Ariando, A</creatorcontrib><description>Two-dimensional (2D) materials provide a platform for developing novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity effect at the interface of 2D materials and magnetic oxide insulators. We highlight the unique spin-related phenomena arising from magnetic exchange interaction and spin-orbital coupling in 2D materials coupled with magnetic oxides. We also describe the fabrication of multifunctional hybrid devices based on spin transport. We conclude with a perspective of the field and highlight challenges for the design and fabrication of 2D spintronic devices and their potential applications in information storage and logic devices.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2304.00356</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Devices ; Graphene ; Information storage ; Insulators ; Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics ; Physics - Strongly Correlated Electrons ; Proximity effect (electricity) ; Spintronics ; Two dimensional materials</subject><ispartof>arXiv.org, 2023-04</ispartof><rights>2023. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://creativecommons.org/licenses/by/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27924</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.2304.00356$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1016/j.jallcom.2022.164830$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Junxiong Hua</creatorcontrib><creatorcontrib>Luo, Jiangbo</creatorcontrib><creatorcontrib>Zheng, Yuntian</creatorcontrib><creatorcontrib>Chen, Jiayu</creatorcontrib><creatorcontrib>Ganesh Ji Omar</creatorcontrib><creatorcontrib>Shen Wee, Andrew Thye</creatorcontrib><creatorcontrib>Ariando, A</creatorcontrib><title>Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators</title><title>arXiv.org</title><description>Two-dimensional (2D) materials provide a platform for developing novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity effect at the interface of 2D materials and magnetic oxide insulators. We highlight the unique spin-related phenomena arising from magnetic exchange interaction and spin-orbital coupling in 2D materials coupled with magnetic oxides. We also describe the fabrication of multifunctional hybrid devices based on spin transport. We conclude with a perspective of the field and highlight challenges for the design and fabrication of 2D spintronic devices and their potential applications in information storage and logic devices.</description><subject>Devices</subject><subject>Graphene</subject><subject>Information storage</subject><subject>Insulators</subject><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Physics - Strongly Correlated Electrons</subject><subject>Proximity effect (electricity)</subject><subject>Spintronics</subject><subject>Two dimensional materials</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkElPwzAQhS0kJKrSH8AJS5wTJl7i9IgqNqmIS-_RxLHBVZZiO9D-e9zlNBrN957mPULuCshFJSU8ot-735xxEDkAl-UVmTHOi6wSjN2QRQhbAGClYlLyGTEf-DWY6DTd-XHvehcP1FhrdKQYafw21A3ReIva0NHS-DdmrevNENw4YEd7TEeHXaA4tGm7eCWn9qgMU4dx9OGWXNsEmcVlzsnm5XmzesvWn6_vq6d1hpJVmWpKUbJWC661gGVjZArR2qZRulxaVWhQlkvUNn0DXBWFYUIzXrTSGoGg-Jzcn21PHdQ773r0h_rYRX3qIhEPZyKl_ZlMiPV2nHxKEmqmlhIqUKzi_1R1Y6s</recordid><startdate>20230401</startdate><enddate>20230401</enddate><creator>Junxiong Hua</creator><creator>Luo, Jiangbo</creator><creator>Zheng, Yuntian</creator><creator>Chen, Jiayu</creator><creator>Ganesh Ji Omar</creator><creator>Shen Wee, Andrew Thye</creator><creator>Ariando, A</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20230401</creationdate><title>Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators</title><author>Junxiong Hua ; Luo, Jiangbo ; Zheng, Yuntian ; Chen, Jiayu ; Ganesh Ji Omar ; Shen Wee, Andrew Thye ; Ariando, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a528-7b6462dc43cc409be5304dfbb7c69f71c07f35acffac03711e24c231d5fe4a073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Devices</topic><topic>Graphene</topic><topic>Information storage</topic><topic>Insulators</topic><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Physics - Strongly Correlated Electrons</topic><topic>Proximity effect (electricity)</topic><topic>Spintronics</topic><topic>Two dimensional materials</topic><toplevel>online_resources</toplevel><creatorcontrib>Junxiong Hua</creatorcontrib><creatorcontrib>Luo, Jiangbo</creatorcontrib><creatorcontrib>Zheng, Yuntian</creatorcontrib><creatorcontrib>Chen, Jiayu</creatorcontrib><creatorcontrib>Ganesh Ji Omar</creatorcontrib><creatorcontrib>Shen Wee, Andrew Thye</creatorcontrib><creatorcontrib>Ariando, A</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Junxiong Hua</au><au>Luo, Jiangbo</au><au>Zheng, Yuntian</au><au>Chen, Jiayu</au><au>Ganesh Ji Omar</au><au>Shen Wee, Andrew Thye</au><au>Ariando, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators</atitle><jtitle>arXiv.org</jtitle><date>2023-04-01</date><risdate>2023</risdate><eissn>2331-8422</eissn><abstract>Two-dimensional (2D) materials provide a platform for developing novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity effect at the interface of 2D materials and magnetic oxide insulators. We highlight the unique spin-related phenomena arising from magnetic exchange interaction and spin-orbital coupling in 2D materials coupled with magnetic oxides. We also describe the fabrication of multifunctional hybrid devices based on spin transport. We conclude with a perspective of the field and highlight challenges for the design and fabrication of 2D spintronic devices and their potential applications in information storage and logic devices.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.2304.00356</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | EISSN: 2331-8422 |
ispartof | arXiv.org, 2023-04 |
issn | 2331-8422 |
language | eng |
recordid | cdi_arxiv_primary_2304_00356 |
source | arXiv.org; Free E- Journals |
subjects | Devices Graphene Information storage Insulators Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Physics - Strongly Correlated Electrons Proximity effect (electricity) Spintronics Two dimensional materials |
title | Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T06%3A08%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Magnetic%20proximity%20effect%20at%20the%20interface%20of%20two-dimensional%20materials%20and%20magnetic%20oxide%20insulators&rft.jtitle=arXiv.org&rft.au=Junxiong%20Hua&rft.date=2023-04-01&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.2304.00356&rft_dat=%3Cproquest_arxiv%3E2795080728%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2795080728&rft_id=info:pmid/&rfr_iscdi=true |