Bounds to electron spin qubit variability for scalable CMOS architectures

Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the...

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Veröffentlicht in:	arXiv.org 2024-07
Hauptverfasser:	Cifuentes, Jesús D, Tanttu, Tuomo, Gilbert, Will, Huang, Jonathan Y, Vahapoglu, Ensar, Leon, Ross C C, Serrano, Santiago, Otter, Dennis, Dunmore, Daniel, Mai, Philip Y, Schlattner, Frédéric, Feng, MengKe, Itoh, Kohei, Abrosimov, Nikolay, Pohl, Hans-Joachim, Thewalt, Michael, Laucht, Arne, Yang, Chih Hwan, Escott, Christopher C, Wee Han Lim, Hudson, Fay E, Rahman, Rajib, Dzurak, Andrew S, Saraiva, Andre
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Control methods Deformation effects Electron spin Electron trajectories Energy spectra Monte Carlo simulation Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Physics - Quantum Physics Quantum computing Quantum dots Qubits (quantum computing) Robust control Roughness Silicon dioxide Spin-orbit interactions Tolerances Valleys Wave functions
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