Spontaneous off-stoichiometry as the knob to control dielectric properties of gapped metals

Using the first-principles calculations and La3Te4 as an example of an n-type gapped metal, we demonstrate that gapped metals can develop spontaneous defect formation resulting in off-stoichiometric compounds. Importantly, these compounds have different free carrier concentrations and can be realize...

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Bibliographische Detailangaben

Hauptverfasser:	Khan, Muhammad Rizwan, Gopidi, Harshan Reddy, Darabian, Hamid Reza, Pawlak, Dorota A, Malyi, Oleksandr I
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science
Online-Zugang:	Volltext bestellen
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