Quantifying Atomic Structural Disorder Using Procrustes Shape Analysis

In this study, we added vacancies adjacent to a Si/Ge interface to create a disordered structure. The structure was then relaxed using various strategies. We applied Procrustes shape analysis for disorder quantification and identifying different local atomic environments.

Bibliographische Detailangaben

Hauptverfasser:	Han, Jinchen, Aller, Henry T, McGaughey, Alan J. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Atomic Physics
Online-Zugang:	Volltext bestellen
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