Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material
High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways...
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| creator | Karmakar, Arka Kazimierczuk, Tomasz Antoniazzi, Igor Raczyński, Mateusz Park, Suji Houk Jang Taniguchi, Takashi Watanabe, Kenji Babiński, Adam Al-Mahboob, Abdullah Molas, Maciej R |
| description | High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlapping of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways. |
| doi_str_mv | 10.48550/arxiv.2301.05644 |
| format | Article |
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Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlapping of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2301.05644</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Charge transfer ; Electromagnetic absorption ; Emission ; Energy gap ; Energy transfer ; Heterostructures ; Interlayers ; Molybdenum disulfide ; Optoelectronics ; Photoluminescence ; Physics - Applied Physics ; Physics - Materials Science ; Two dimensional materials</subject><ispartof>arXiv.org, 2023-03</ispartof><rights>2023. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). 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Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.</description><subject>Charge transfer</subject><subject>Electromagnetic absorption</subject><subject>Emission</subject><subject>Energy gap</subject><subject>Energy transfer</subject><subject>Heterostructures</subject><subject>Interlayers</subject><subject>Molybdenum disulfide</subject><subject>Optoelectronics</subject><subject>Photoluminescence</subject><subject>Physics - Applied Physics</subject><subject>Physics - Materials Science</subject><subject>Two dimensional materials</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkEFPwzAMhSMkJKaxH8CJSJwzkjRp2iNsg00q4rJ75bVOl2lLS9qNlV9PNzjZfn5-sj5CHgSfqkRr_gzh7E5TGXEx5TpW6oaMZBQJligp78ikbXeccxkbqXU0Ij-Lc-E66Fzt2Rwb9CX6ji5dtWVZ73xFr_vau-LSbcFXSE8O6Mp3GPbQY6ALj6Hq6TqAb-0w21AfaFZ_Y2BdzS5Rg_gKvqygoXJOP2A4dbC_J7cW9i1O_uuYrN8W69mSZZ_vq9lLxiDViincQIxpYY0CLmyJQkMsEwVKWyuM1UrJokgNF1hupBKJAIHciEKqDddCRmPy-Bd7BZM3wR0g9PkFUH4FNDie_hxNqL-O2Hb5rj4GP_yUSxPrJBFGptEvsl9pUQ</recordid><startdate>20230323</startdate><enddate>20230323</enddate><creator>Karmakar, Arka</creator><creator>Kazimierczuk, Tomasz</creator><creator>Antoniazzi, Igor</creator><creator>Raczyński, Mateusz</creator><creator>Park, Suji</creator><creator>Houk Jang</creator><creator>Taniguchi, Takashi</creator><creator>Watanabe, Kenji</creator><creator>Babiński, Adam</creator><creator>Al-Mahboob, Abdullah</creator><creator>Molas, Maciej R</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20230323</creationdate><title>Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material</title><author>Karmakar, Arka ; 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| subjects | Charge transfer Electromagnetic absorption Emission Energy gap Energy transfer Heterostructures Interlayers Molybdenum disulfide Optoelectronics Photoluminescence Physics - Applied Physics Physics - Materials Science Two dimensional materials |
| title | Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material |
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