Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by comb...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	arXiv.org 2022-12
Hauptverfasser:	Mondal, Sucheta, Polley, Debanjan, Pattabi, Akshay, Chatterjee, Jyotirmoy, Salomoni, David, Aviles-Felix, Luis, Olivier, Aurélien, Rubio-Roy, Miguel, Diény, Bernard, Liliana Daniela Buda Prejbeanu, Sousa, Ricardo, Prejbeanu, Ioan Lucian, Bokor, Jeffrey
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Commutation Data storage Electrical junctions Fluence Kerr magnetooptical effect Magnetoresistance Magnetoresistivity Memory devices Multilayers Optical switching Physics - Applied Physics Physics - Materials Science Switches Tunnel junctions
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!