Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change materials as well as their extreme conductivity depe...

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Veröffentlicht in:arXiv.org 2022-11
Hauptverfasser: Thesberg, M, Stanojevic, Z, Baumgartner, O, Kernstock, C, Leonelli, D, Barci, M, Wang, X, Zhou, X, Jiao, H, Donadio, G L, Garbin, D, Witters, T, Kundu, S, Hody, H, Delhougne, R, Kar, G, Karner, M
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Sprache:eng
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Zusammenfassung:Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change materials as well as their extreme conductivity dependence on both electric field and temperature into a set of self-consistently-solved thermoelectric and phase-field partial-differential equations. However, demonstrations of the ability of such models to match actual experimental results are rare. In addition, such PCM devices also require a so-called selector device - such as an Ovonic Threshold Switching (OTS) device - in series for proper memory operation. However, monolithic simulation of both the PCM and OTS selector device in a single simulation is largely absent from the literature, despite its potential value for material- and design-space explorations. It is the goal of this work to first characterize a PCM device in isolation against experimental data, then to demonstrate the qualitative behavior of a simulated OTS device in isolation and finally to perform a single monolithic simulation of the PCM + OTS device within the confines of a commercially available TCAD solver: GTS Framework.
ISSN:2331-8422
DOI:10.48550/arxiv.2211.06084