Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors

For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The...

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Veröffentlicht in:	arXiv.org 2022-10
Hauptverfasser:	Favero, D, De Santi, C, Mukherjee, K, Borga, M, Geens, K, Chatterjee, U, Bakeroot, B, Decoutere, S, Rampazzo, F, Meneghesso, G, Zanoni, E, Meneghini, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Capacitors Doping Electric fields Electric potential Gallium nitrides Material properties Physics - Applied Physics Process parameters Robustness Transistors Voltage
Online-Zugang:	Volltext
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