A Compensated Design of the LGAD Gain Layer
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p\(^+\) implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting \(\sim\) 5E16/cm\(^3\) atoms of an accept...
Gespeichert in:
| Veröffentlicht in: | arXiv.org 2022-09 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | arXiv.org |
| container_volume | |
| creator | Sola, Valentina Arcidiacono, Roberta Asenov, Patrick Borghi, Giacomo Boscardin, Maurizio Cartiglia, Nicolò Vignali, Matteo Centis Croci, Tommaso Ferrero, Marco Fondacci, Alessandro Gioachin, Giulia Giordanengo, Simona Lantieri, Leonardo Mandurrino, Marco Menzio, Luca Monaco, Vincenzo Morozzi, Arianna Moscatelli, Francesco Passeri, Daniele Pastrone, Nadia Paternoster, Giovanni Siviero, Federico Staiano, Amedeo Tornago, Marta |
| description | In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p\(^+\) implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting \(\sim\) 5E16/cm\(^3\) atoms of an acceptor material, typically Boron or Gallium, in the region below the n\(^{++}\) electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p\(^+\) and an n\(^+\) implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm\(^3\), similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of \(\sim\) 1-2E15/cm\(^2\), and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm\(^2\). |
| doi_str_mv | 10.48550/arxiv.2209.00494 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_2209_00494</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2709197319</sourcerecordid><originalsourceid>FETCH-LOGICAL-a529-75e8f71e7bcbc89347cf96884f7c43572fd5eb66e624566654475a2b9545adec3</originalsourceid><addsrcrecordid>eNotj81KxDAYRYMgOIzzAK4MuJTW9Eu-_CxLR6tQcDP7kraJdnDamnTEeXvnx9XdHC7nEHKXsVRoRPZkw2__kwIwkzImjLgiC-A8S7QAuCGrGLeMMZAKEPmCPOa0GHeTG6KdXUfXLvYfAx09nT8drcp8TUvbD7SyBxduybW3X9Gt_ndJNi_Pm-I1qd7LtyKvEotgEoVOe5U51bRNqw0XqvVGai28agVHBb5D10jpJAiUUqIQCi00BgXazrV8Se4vt-eSegr9zoZDfSqqz0VH4uFCTGH83rs419txH4ajUw2Kmcwonhn-B6FDSwc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2709197319</pqid></control><display><type>article</type><title>A Compensated Design of the LGAD Gain Layer</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Sola, Valentina ; Arcidiacono, Roberta ; Asenov, Patrick ; Borghi, Giacomo ; Boscardin, Maurizio ; Cartiglia, Nicolò ; Vignali, Matteo Centis ; Croci, Tommaso ; Ferrero, Marco ; Fondacci, Alessandro ; Gioachin, Giulia ; Giordanengo, Simona ; Lantieri, Leonardo ; Mandurrino, Marco ; Menzio, Luca ; Monaco, Vincenzo ; Morozzi, Arianna ; Moscatelli, Francesco ; Passeri, Daniele ; Pastrone, Nadia ; Paternoster, Giovanni ; Siviero, Federico ; Staiano, Amedeo ; Tornago, Marta</creator><creatorcontrib>Sola, Valentina ; Arcidiacono, Roberta ; Asenov, Patrick ; Borghi, Giacomo ; Boscardin, Maurizio ; Cartiglia, Nicolò ; Vignali, Matteo Centis ; Croci, Tommaso ; Ferrero, Marco ; Fondacci, Alessandro ; Gioachin, Giulia ; Giordanengo, Simona ; Lantieri, Leonardo ; Mandurrino, Marco ; Menzio, Luca ; Monaco, Vincenzo ; Morozzi, Arianna ; Moscatelli, Francesco ; Passeri, Daniele ; Pastrone, Nadia ; Paternoster, Giovanni ; Siviero, Federico ; Staiano, Amedeo ; Tornago, Marta</creatorcontrib><description>In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p\(^+\) implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting \(\sim\) 5E16/cm\(^3\) atoms of an acceptor material, typically Boron or Gallium, in the region below the n\(^{++}\) electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p\(^+\) and an n\(^+\) implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm\(^3\), similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of \(\sim\) 1-2E15/cm\(^2\), and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm\(^2\).</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2209.00494</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Acceptor materials ; Avalanche diodes ; Design standards ; Fluence ; Gallium ; Irradiation ; Physics - Instrumentation and Detectors ; Sensors ; Transplants & implants</subject><ispartof>arXiv.org, 2022-09</ispartof><rights>2022. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27924</link.rule.ids><backlink>$$Uhttps://doi.org/10.1016/j.nima.2022.167232$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.2209.00494$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Sola, Valentina</creatorcontrib><creatorcontrib>Arcidiacono, Roberta</creatorcontrib><creatorcontrib>Asenov, Patrick</creatorcontrib><creatorcontrib>Borghi, Giacomo</creatorcontrib><creatorcontrib>Boscardin, Maurizio</creatorcontrib><creatorcontrib>Cartiglia, Nicolò</creatorcontrib><creatorcontrib>Vignali, Matteo Centis</creatorcontrib><creatorcontrib>Croci, Tommaso</creatorcontrib><creatorcontrib>Ferrero, Marco</creatorcontrib><creatorcontrib>Fondacci, Alessandro</creatorcontrib><creatorcontrib>Gioachin, Giulia</creatorcontrib><creatorcontrib>Giordanengo, Simona</creatorcontrib><creatorcontrib>Lantieri, Leonardo</creatorcontrib><creatorcontrib>Mandurrino, Marco</creatorcontrib><creatorcontrib>Menzio, Luca</creatorcontrib><creatorcontrib>Monaco, Vincenzo</creatorcontrib><creatorcontrib>Morozzi, Arianna</creatorcontrib><creatorcontrib>Moscatelli, Francesco</creatorcontrib><creatorcontrib>Passeri, Daniele</creatorcontrib><creatorcontrib>Pastrone, Nadia</creatorcontrib><creatorcontrib>Paternoster, Giovanni</creatorcontrib><creatorcontrib>Siviero, Federico</creatorcontrib><creatorcontrib>Staiano, Amedeo</creatorcontrib><creatorcontrib>Tornago, Marta</creatorcontrib><title>A Compensated Design of the LGAD Gain Layer</title><title>arXiv.org</title><description>In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p\(^+\) implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting \(\sim\) 5E16/cm\(^3\) atoms of an acceptor material, typically Boron or Gallium, in the region below the n\(^{++}\) electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p\(^+\) and an n\(^+\) implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm\(^3\), similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of \(\sim\) 1-2E15/cm\(^2\), and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm\(^2\).</description><subject>Acceptor materials</subject><subject>Avalanche diodes</subject><subject>Design standards</subject><subject>Fluence</subject><subject>Gallium</subject><subject>Irradiation</subject><subject>Physics - Instrumentation and Detectors</subject><subject>Sensors</subject><subject>Transplants & implants</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj81KxDAYRYMgOIzzAK4MuJTW9Eu-_CxLR6tQcDP7kraJdnDamnTEeXvnx9XdHC7nEHKXsVRoRPZkw2__kwIwkzImjLgiC-A8S7QAuCGrGLeMMZAKEPmCPOa0GHeTG6KdXUfXLvYfAx09nT8drcp8TUvbD7SyBxduybW3X9Gt_ndJNi_Pm-I1qd7LtyKvEotgEoVOe5U51bRNqw0XqvVGai28agVHBb5D10jpJAiUUqIQCi00BgXazrV8Se4vt-eSegr9zoZDfSqqz0VH4uFCTGH83rs419txH4ajUw2Kmcwonhn-B6FDSwc</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Sola, Valentina</creator><creator>Arcidiacono, Roberta</creator><creator>Asenov, Patrick</creator><creator>Borghi, Giacomo</creator><creator>Boscardin, Maurizio</creator><creator>Cartiglia, Nicolò</creator><creator>Vignali, Matteo Centis</creator><creator>Croci, Tommaso</creator><creator>Ferrero, Marco</creator><creator>Fondacci, Alessandro</creator><creator>Gioachin, Giulia</creator><creator>Giordanengo, Simona</creator><creator>Lantieri, Leonardo</creator><creator>Mandurrino, Marco</creator><creator>Menzio, Luca</creator><creator>Monaco, Vincenzo</creator><creator>Morozzi, Arianna</creator><creator>Moscatelli, Francesco</creator><creator>Passeri, Daniele</creator><creator>Pastrone, Nadia</creator><creator>Paternoster, Giovanni</creator><creator>Siviero, Federico</creator><creator>Staiano, Amedeo</creator><creator>Tornago, Marta</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20220901</creationdate><title>A Compensated Design of the LGAD Gain Layer</title><author>Sola, Valentina ; Arcidiacono, Roberta ; Asenov, Patrick ; Borghi, Giacomo ; Boscardin, Maurizio ; Cartiglia, Nicolò ; Vignali, Matteo Centis ; Croci, Tommaso ; Ferrero, Marco ; Fondacci, Alessandro ; Gioachin, Giulia ; Giordanengo, Simona ; Lantieri, Leonardo ; Mandurrino, Marco ; Menzio, Luca ; Monaco, Vincenzo ; Morozzi, Arianna ; Moscatelli, Francesco ; Passeri, Daniele ; Pastrone, Nadia ; Paternoster, Giovanni ; Siviero, Federico ; Staiano, Amedeo ; Tornago, Marta</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a529-75e8f71e7bcbc89347cf96884f7c43572fd5eb66e624566654475a2b9545adec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Acceptor materials</topic><topic>Avalanche diodes</topic><topic>Design standards</topic><topic>Fluence</topic><topic>Gallium</topic><topic>Irradiation</topic><topic>Physics - Instrumentation and Detectors</topic><topic>Sensors</topic><topic>Transplants & implants</topic><toplevel>online_resources</toplevel><creatorcontrib>Sola, Valentina</creatorcontrib><creatorcontrib>Arcidiacono, Roberta</creatorcontrib><creatorcontrib>Asenov, Patrick</creatorcontrib><creatorcontrib>Borghi, Giacomo</creatorcontrib><creatorcontrib>Boscardin, Maurizio</creatorcontrib><creatorcontrib>Cartiglia, Nicolò</creatorcontrib><creatorcontrib>Vignali, Matteo Centis</creatorcontrib><creatorcontrib>Croci, Tommaso</creatorcontrib><creatorcontrib>Ferrero, Marco</creatorcontrib><creatorcontrib>Fondacci, Alessandro</creatorcontrib><creatorcontrib>Gioachin, Giulia</creatorcontrib><creatorcontrib>Giordanengo, Simona</creatorcontrib><creatorcontrib>Lantieri, Leonardo</creatorcontrib><creatorcontrib>Mandurrino, Marco</creatorcontrib><creatorcontrib>Menzio, Luca</creatorcontrib><creatorcontrib>Monaco, Vincenzo</creatorcontrib><creatorcontrib>Morozzi, Arianna</creatorcontrib><creatorcontrib>Moscatelli, Francesco</creatorcontrib><creatorcontrib>Passeri, Daniele</creatorcontrib><creatorcontrib>Pastrone, Nadia</creatorcontrib><creatorcontrib>Paternoster, Giovanni</creatorcontrib><creatorcontrib>Siviero, Federico</creatorcontrib><creatorcontrib>Staiano, Amedeo</creatorcontrib><creatorcontrib>Tornago, Marta</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sola, Valentina</au><au>Arcidiacono, Roberta</au><au>Asenov, Patrick</au><au>Borghi, Giacomo</au><au>Boscardin, Maurizio</au><au>Cartiglia, Nicolò</au><au>Vignali, Matteo Centis</au><au>Croci, Tommaso</au><au>Ferrero, Marco</au><au>Fondacci, Alessandro</au><au>Gioachin, Giulia</au><au>Giordanengo, Simona</au><au>Lantieri, Leonardo</au><au>Mandurrino, Marco</au><au>Menzio, Luca</au><au>Monaco, Vincenzo</au><au>Morozzi, Arianna</au><au>Moscatelli, Francesco</au><au>Passeri, Daniele</au><au>Pastrone, Nadia</au><au>Paternoster, Giovanni</au><au>Siviero, Federico</au><au>Staiano, Amedeo</au><au>Tornago, Marta</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Compensated Design of the LGAD Gain Layer</atitle><jtitle>arXiv.org</jtitle><date>2022-09-01</date><risdate>2022</risdate><eissn>2331-8422</eissn><abstract>In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p\(^+\) implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting \(\sim\) 5E16/cm\(^3\) atoms of an acceptor material, typically Boron or Gallium, in the region below the n\(^{++}\) electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p\(^+\) and an n\(^+\) implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm\(^3\), similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of \(\sim\) 1-2E15/cm\(^2\), and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm\(^2\).</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.2209.00494</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | EISSN: 2331-8422 |
| ispartof | arXiv.org, 2022-09 |
| issn | 2331-8422 |
| language | eng |
| recordid | cdi_arxiv_primary_2209_00494 |
| source | arXiv.org; Free E- Journals |
| subjects | Acceptor materials Avalanche diodes Design standards Fluence Gallium Irradiation Physics - Instrumentation and Detectors Sensors Transplants & implants |
| title | A Compensated Design of the LGAD Gain Layer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T20%3A26%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Compensated%20Design%20of%20the%20LGAD%20Gain%20Layer&rft.jtitle=arXiv.org&rft.au=Sola,%20Valentina&rft.date=2022-09-01&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.2209.00494&rft_dat=%3Cproquest_arxiv%3E2709197319%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2709197319&rft_id=info:pmid/&rfr_iscdi=true |