Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)

Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees o...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Kölsch, Sebastian, Schuck, Alfons, Fedchenko, Olena, Vasilyev, Dmitry, Chernov, Sergeij, Tkach, Lena, Schlüter, Christoph, Peixoto, Thiago R. F, Gloskowski, Andrii, Elmers, Hans-Joachim, Schönhense, Gerd, Krellner, Cornelius, Huth, Michael
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science Physics - Strongly Correlated Electrons
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	Kölsch, Sebastian Schuck, Alfons Fedchenko, Olena Vasilyev, Dmitry Chernov, Sergeij Tkach, Lena Schlüter, Christoph Peixoto, Thiago R. F Gloskowski, Andrii Elmers, Hans-Joachim Schönhense, Gerd Krellner, Cornelius Huth, Michael
description	Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.
doi_str_mv	10.48550/arxiv.2208.14912
format	Article
fullrecord	<record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_2208_14912</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2208_14912</sourcerecordid><originalsourceid>FETCH-LOGICAL-a672-e1c534ede9b9cf0a24b57c950b127e9daf199e4d515ea0141740cbc05a3a11d73</originalsourceid><addsrcrecordid>eNotjz1PwzAURb0woMIPYMJDBxgSbMcm9Yii8iEVFYnu0Yv9HCwlbuQ4pfx7msJy73CvjnQIueEslyul2APEoz_kQrBVzqXm4pLEqoN-8KGl6ByaRPeBJuwHjJCmiJkPdjJo6QE6DAZpihBGn_zp5gPFwSc4eujoevqwy1osP_2cNH2dVue7fqRt3H-HGfvebu8Y4_dX5MJBN-L1fy_I7nm9q16zzfblrXraZPBYigy5UYVEi7rRxjEQslGl0Yo1XJSoLTiuNUqruEJgXPJSMtMYpqAAzm1ZLMjtH_YsXQ_R9xB_6lm-PssXv75yVGE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)</title><source>arXiv.org</source><creator>Kölsch, Sebastian ; Schuck, Alfons ; Fedchenko, Olena ; Vasilyev, Dmitry ; Chernov, Sergeij ; Tkach, Lena ; Schlüter, Christoph ; Peixoto, Thiago R. F ; Gloskowski, Andrii ; Elmers, Hans-Joachim ; Schönhense, Gerd ; Krellner, Cornelius ; Huth, Michael</creator><creatorcontrib>Kölsch, Sebastian ; Schuck, Alfons ; Fedchenko, Olena ; Vasilyev, Dmitry ; Chernov, Sergeij ; Tkach, Lena ; Schlüter, Christoph ; Peixoto, Thiago R. F ; Gloskowski, Andrii ; Elmers, Hans-Joachim ; Schönhense, Gerd ; Krellner, Cornelius ; Huth, Michael</creatorcontrib><description>Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.</description><identifier>DOI: 10.48550/arxiv.2208.14912</identifier><language>eng</language><subject>Physics - Materials Science ; Physics - Strongly Correlated Electrons</subject><creationdate>2022-08</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,777,882</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2208.14912$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2208.14912$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1103/PhysRevMaterials.6.115003$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Kölsch, Sebastian</creatorcontrib><creatorcontrib>Schuck, Alfons</creatorcontrib><creatorcontrib>Fedchenko, Olena</creatorcontrib><creatorcontrib>Vasilyev, Dmitry</creatorcontrib><creatorcontrib>Chernov, Sergeij</creatorcontrib><creatorcontrib>Tkach, Lena</creatorcontrib><creatorcontrib>Schlüter, Christoph</creatorcontrib><creatorcontrib>Peixoto, Thiago R. F</creatorcontrib><creatorcontrib>Gloskowski, Andrii</creatorcontrib><creatorcontrib>Elmers, Hans-Joachim</creatorcontrib><creatorcontrib>Schönhense, Gerd</creatorcontrib><creatorcontrib>Krellner, Cornelius</creatorcontrib><creatorcontrib>Huth, Michael</creatorcontrib><title>Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)</title><description>Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.</description><subject>Physics - Materials Science</subject><subject>Physics - Strongly Correlated Electrons</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotjz1PwzAURb0woMIPYMJDBxgSbMcm9Yii8iEVFYnu0Yv9HCwlbuQ4pfx7msJy73CvjnQIueEslyul2APEoz_kQrBVzqXm4pLEqoN-8KGl6ByaRPeBJuwHjJCmiJkPdjJo6QE6DAZpihBGn_zp5gPFwSc4eujoevqwy1osP_2cNH2dVue7fqRt3H-HGfvebu8Y4_dX5MJBN-L1fy_I7nm9q16zzfblrXraZPBYigy5UYVEi7rRxjEQslGl0Yo1XJSoLTiuNUqruEJgXPJSMtMYpqAAzm1ZLMjtH_YsXQ_R9xB_6lm-PssXv75yVGE</recordid><startdate>20220831</startdate><enddate>20220831</enddate><creator>Kölsch, Sebastian</creator><creator>Schuck, Alfons</creator><creator>Fedchenko, Olena</creator><creator>Vasilyev, Dmitry</creator><creator>Chernov, Sergeij</creator><creator>Tkach, Lena</creator><creator>Schlüter, Christoph</creator><creator>Peixoto, Thiago R. F</creator><creator>Gloskowski, Andrii</creator><creator>Elmers, Hans-Joachim</creator><creator>Schönhense, Gerd</creator><creator>Krellner, Cornelius</creator><creator>Huth, Michael</creator><scope>GOX</scope></search><sort><creationdate>20220831</creationdate><title>Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)</title><author>Kölsch, Sebastian ; Schuck, Alfons ; Fedchenko, Olena ; Vasilyev, Dmitry ; Chernov, Sergeij ; Tkach, Lena ; Schlüter, Christoph ; Peixoto, Thiago R. F ; Gloskowski, Andrii ; Elmers, Hans-Joachim ; Schönhense, Gerd ; Krellner, Cornelius ; Huth, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a672-e1c534ede9b9cf0a24b57c950b127e9daf199e4d515ea0141740cbc05a3a11d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Physics - Materials Science</topic><topic>Physics - Strongly Correlated Electrons</topic><toplevel>online_resources</toplevel><creatorcontrib>Kölsch, Sebastian</creatorcontrib><creatorcontrib>Schuck, Alfons</creatorcontrib><creatorcontrib>Fedchenko, Olena</creatorcontrib><creatorcontrib>Vasilyev, Dmitry</creatorcontrib><creatorcontrib>Chernov, Sergeij</creatorcontrib><creatorcontrib>Tkach, Lena</creatorcontrib><creatorcontrib>Schlüter, Christoph</creatorcontrib><creatorcontrib>Peixoto, Thiago R. F</creatorcontrib><creatorcontrib>Gloskowski, Andrii</creatorcontrib><creatorcontrib>Elmers, Hans-Joachim</creatorcontrib><creatorcontrib>Schönhense, Gerd</creatorcontrib><creatorcontrib>Krellner, Cornelius</creatorcontrib><creatorcontrib>Huth, Michael</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kölsch, Sebastian</au><au>Schuck, Alfons</au><au>Fedchenko, Olena</au><au>Vasilyev, Dmitry</au><au>Chernov, Sergeij</au><au>Tkach, Lena</au><au>Schlüter, Christoph</au><au>Peixoto, Thiago R. F</au><au>Gloskowski, Andrii</au><au>Elmers, Hans-Joachim</au><au>Schönhense, Gerd</au><au>Krellner, Cornelius</au><au>Huth, Michael</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)</atitle><date>2022-08-31</date><risdate>2022</risdate><abstract>Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.</abstract><doi>10.48550/arxiv.2208.14912</doi><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier	DOI: 10.48550/arxiv.2208.14912
ispartof
issn
language	eng
recordid	cdi_arxiv_primary_2208_14912
source	arXiv.org
subjects	Physics - Materials Science Physics - Strongly Correlated Electrons
title	Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T14%3A58%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-arxiv_GOX&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Clamping%20effect%20on%20temperature-induced%20valence%20transition%20in%20epitaxial%20EuPd$_2$Si$_2$%20thin%20films%20grown%20on%20MgO(001)&rft.au=K%C3%B6lsch,%20Sebastian&rft.date=2022-08-31&rft_id=info:doi/10.48550/arxiv.2208.14912&rft_dat=%3Carxiv_GOX%3E2208_14912%3C/arxiv_GOX%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true