On-chip low-loss all-optical MoSe$_2$ modulator
Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for efficient light emission, valleytronics, and polaritonic lasing,...
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| creator | Alaloul, Mohammed Khurgin, Jacob B Al-Ani, Ibrahim As'ham, Khalil Huang, Lujun Hattori, Haroldo T Miroshnichenko, Andrey E |
| description | Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$,
WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and
exciton-polariton interactions at the atomic scale, which could be harnessed
for efficient light emission, valleytronics, and polaritonic lasing,
respectively. Nevertheless, to build next-generation photonic devices that make
use of these features, it is first essential to model the all-optical control
mechanisms in TMDCs. Herein, a simple model is proposed to quantify the
performance of a 35$\,$\textmu m long Si$_3$N$_4$ waveguide-integrated
all-optical MoSe$_2$ modulator. Using this model, a switching energy of
14.6$\,$pJ is obtained for a transverse-magnetic (TM) and transverse-electric
(TE) polarised pump signals at $\lambda =\,$480$\,$nm. Moreover, maximal
extinction ratios of 20.6$\,$dB and 20.1$\,$dB are achieved for a TM and TE
polarised probe signal at $\lambda =\,$500$\,$nm, respectively, with an
ultra-low insertion loss of $ |
| doi_str_mv | 10.48550/arxiv.2207.01973 |
| format | Article |
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WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and
exciton-polariton interactions at the atomic scale, which could be harnessed
for efficient light emission, valleytronics, and polaritonic lasing,
respectively. Nevertheless, to build next-generation photonic devices that make
use of these features, it is first essential to model the all-optical control
mechanisms in TMDCs. Herein, a simple model is proposed to quantify the
performance of a 35$\,$\textmu m long Si$_3$N$_4$ waveguide-integrated
all-optical MoSe$_2$ modulator. Using this model, a switching energy of
14.6$\,$pJ is obtained for a transverse-magnetic (TM) and transverse-electric
(TE) polarised pump signals at $\lambda =\,$480$\,$nm. Moreover, maximal
extinction ratios of 20.6$\,$dB and 20.1$\,$dB are achieved for a TM and TE
polarised probe signal at $\lambda =\,$500$\,$nm, respectively, with an
ultra-low insertion loss of $<0.3\,$dB. Moreover, the device operates with an
ultrafast recovery time of 50$\,$ps, while maintaining a high extinction ratio
for practical applications. These findings facilitate modeling and designing
novel TMDC-based photonic devices.</description><identifier>DOI: 10.48550/arxiv.2207.01973</identifier><language>eng</language><subject>Physics - Applied Physics ; Physics - Optics</subject><creationdate>2022-07</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2207.01973$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2207.01973$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1364/OL.465171$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Alaloul, Mohammed</creatorcontrib><creatorcontrib>Khurgin, Jacob B</creatorcontrib><creatorcontrib>Al-Ani, Ibrahim</creatorcontrib><creatorcontrib>As'ham, Khalil</creatorcontrib><creatorcontrib>Huang, Lujun</creatorcontrib><creatorcontrib>Hattori, Haroldo T</creatorcontrib><creatorcontrib>Miroshnichenko, Andrey E</creatorcontrib><title>On-chip low-loss all-optical MoSe$_2$ modulator</title><description>Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$,
WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and
exciton-polariton interactions at the atomic scale, which could be harnessed
for efficient light emission, valleytronics, and polaritonic lasing,
respectively. Nevertheless, to build next-generation photonic devices that make
use of these features, it is first essential to model the all-optical control
mechanisms in TMDCs. Herein, a simple model is proposed to quantify the
performance of a 35$\,$\textmu m long Si$_3$N$_4$ waveguide-integrated
all-optical MoSe$_2$ modulator. Using this model, a switching energy of
14.6$\,$pJ is obtained for a transverse-magnetic (TM) and transverse-electric
(TE) polarised pump signals at $\lambda =\,$480$\,$nm. Moreover, maximal
extinction ratios of 20.6$\,$dB and 20.1$\,$dB are achieved for a TM and TE
polarised probe signal at $\lambda =\,$500$\,$nm, respectively, with an
ultra-low insertion loss of $<0.3\,$dB. Moreover, the device operates with an
ultrafast recovery time of 50$\,$ps, while maintaining a high extinction ratio
for practical applications. These findings facilitate modeling and designing
novel TMDC-based photonic devices.</description><subject>Physics - Applied Physics</subject><subject>Physics - Optics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNpjYJA0NNAzsTA1NdBPLKrILNMzMjIw1zMwtDQ35mTQ98_TTc7ILFDIyS_XzckvLlZIzMnRzS8oyUxOzFHwzQ9OVYk3UlHIzU8pzUksyS_iYWBNS8wpTuWF0twM8m6uIc4eumCj4wuKMnMTiyrjQVbEg60wJqwCALEAL4Q</recordid><startdate>20220705</startdate><enddate>20220705</enddate><creator>Alaloul, Mohammed</creator><creator>Khurgin, Jacob B</creator><creator>Al-Ani, Ibrahim</creator><creator>As'ham, Khalil</creator><creator>Huang, Lujun</creator><creator>Hattori, Haroldo T</creator><creator>Miroshnichenko, Andrey E</creator><scope>GOX</scope></search><sort><creationdate>20220705</creationdate><title>On-chip low-loss all-optical MoSe$_2$ modulator</title><author>Alaloul, Mohammed ; Khurgin, Jacob B ; Al-Ani, Ibrahim ; As'ham, Khalil ; Huang, Lujun ; Hattori, Haroldo T ; Miroshnichenko, Andrey E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-arxiv_primary_2207_019733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Physics - Applied Physics</topic><topic>Physics - Optics</topic><toplevel>online_resources</toplevel><creatorcontrib>Alaloul, Mohammed</creatorcontrib><creatorcontrib>Khurgin, Jacob B</creatorcontrib><creatorcontrib>Al-Ani, Ibrahim</creatorcontrib><creatorcontrib>As'ham, Khalil</creatorcontrib><creatorcontrib>Huang, Lujun</creatorcontrib><creatorcontrib>Hattori, Haroldo T</creatorcontrib><creatorcontrib>Miroshnichenko, Andrey E</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Alaloul, Mohammed</au><au>Khurgin, Jacob B</au><au>Al-Ani, Ibrahim</au><au>As'ham, Khalil</au><au>Huang, Lujun</au><au>Hattori, Haroldo T</au><au>Miroshnichenko, Andrey E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On-chip low-loss all-optical MoSe$_2$ modulator</atitle><date>2022-07-05</date><risdate>2022</risdate><abstract>Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$,
WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and
exciton-polariton interactions at the atomic scale, which could be harnessed
for efficient light emission, valleytronics, and polaritonic lasing,
respectively. Nevertheless, to build next-generation photonic devices that make
use of these features, it is first essential to model the all-optical control
mechanisms in TMDCs. Herein, a simple model is proposed to quantify the
performance of a 35$\,$\textmu m long Si$_3$N$_4$ waveguide-integrated
all-optical MoSe$_2$ modulator. Using this model, a switching energy of
14.6$\,$pJ is obtained for a transverse-magnetic (TM) and transverse-electric
(TE) polarised pump signals at $\lambda =\,$480$\,$nm. Moreover, maximal
extinction ratios of 20.6$\,$dB and 20.1$\,$dB are achieved for a TM and TE
polarised probe signal at $\lambda =\,$500$\,$nm, respectively, with an
ultra-low insertion loss of $<0.3\,$dB. Moreover, the device operates with an
ultrafast recovery time of 50$\,$ps, while maintaining a high extinction ratio
for practical applications. These findings facilitate modeling and designing
novel TMDC-based photonic devices.</abstract><doi>10.48550/arxiv.2207.01973</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Physics - Applied Physics Physics - Optics |
| title | On-chip low-loss all-optical MoSe$_2$ modulator |
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