All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors
Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K and understanding of the SVHE-induced spin/valley polari...
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creator | Li, Xintong Liu, Zhida Liu, Yihan Karki, Suyogya Li, Xiaoqin Akinwande, Deji Incorvia, Jean Anne C |
description | Heavy metal-based two-dimensional van der Waals materials have a large,
coupled spin and valley Hall effect (SVHE) that has potential use in
spintronics and valleytronics. Optical measurements of the SVHE have largely
been performed below 30 K and understanding of the SVHE-induced spin/valley
polarizations that can be electrically generated is limited. Here, we study the
SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR)
measurements show the spatial distribution of the SVHE at different
temperatures, its persistence up to 160 K, and that it can be electrically
modulated via gate and drain bias. A spin/valley drift and diffusion model
together with reflection spectra data is used to interpret the KR data and
predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at
160 K. The excess spin and valley per unit length along the edge is calculated
to be 109 per micron at 45 K, which corresponds to a spin/valley polarization
on the edge of 6%. These results are important steps towards practical use of
the SVHE. |
doi_str_mv | 10.48550/arxiv.2202.11774 |
format | Article |
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coupled spin and valley Hall effect (SVHE) that has potential use in
spintronics and valleytronics. Optical measurements of the SVHE have largely
been performed below 30 K and understanding of the SVHE-induced spin/valley
polarizations that can be electrically generated is limited. Here, we study the
SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR)
measurements show the spatial distribution of the SVHE at different
temperatures, its persistence up to 160 K, and that it can be electrically
modulated via gate and drain bias. A spin/valley drift and diffusion model
together with reflection spectra data is used to interpret the KR data and
predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at
160 K. The excess spin and valley per unit length along the edge is calculated
to be 109 per micron at 45 K, which corresponds to a spin/valley polarization
on the edge of 6%. These results are important steps towards practical use of
the SVHE.</description><identifier>DOI: 10.48550/arxiv.2202.11774</identifier><language>eng</language><subject>Physics - Mesoscale and Nanoscale Physics</subject><creationdate>2022-02</creationdate><rights>http://creativecommons.org/licenses/by/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2202.11774$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2202.11774$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Xintong</creatorcontrib><creatorcontrib>Liu, Zhida</creatorcontrib><creatorcontrib>Liu, Yihan</creatorcontrib><creatorcontrib>Karki, Suyogya</creatorcontrib><creatorcontrib>Li, Xiaoqin</creatorcontrib><creatorcontrib>Akinwande, Deji</creatorcontrib><creatorcontrib>Incorvia, Jean Anne C</creatorcontrib><title>All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors</title><description>Heavy metal-based two-dimensional van der Waals materials have a large,
coupled spin and valley Hall effect (SVHE) that has potential use in
spintronics and valleytronics. Optical measurements of the SVHE have largely
been performed below 30 K and understanding of the SVHE-induced spin/valley
polarizations that can be electrically generated is limited. Here, we study the
SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR)
measurements show the spatial distribution of the SVHE at different
temperatures, its persistence up to 160 K, and that it can be electrically
modulated via gate and drain bias. A spin/valley drift and diffusion model
together with reflection spectra data is used to interpret the KR data and
predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at
160 K. The excess spin and valley per unit length along the edge is calculated
to be 109 per micron at 45 K, which corresponds to a spin/valley polarization
on the edge of 6%. These results are important steps towards practical use of
the SVHE.</description><subject>Physics - Mesoscale and Nanoscale Physics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj71OwzAURr0woMIDMOEXSPBvHI9VKBSpFUMjGKOLcy0iuXbkBETfnjYwfcP5dKRDyB1npaq1Zg-Qf4bvUggmSs6NUdckr0Ogm4BuzoODQJsU55wChdjTFo8jZpi_MtJHHDH2GB3S5On8ifQwDnG5vUEIeKJbuJi8P6vomexTTAFOmOn7AQVtM8RpmOaUpxty5SFMePu_K9I-bdpmW-xen1-a9a6AyqiiZ073wlUSa-GBO2Gt40bW-IHCWAvIFDBTaSt7yb3XnFtjay1QQO29UnJF7v-0S3Q35uEI-dRd4rslXv4C6mVU2g</recordid><startdate>20220223</startdate><enddate>20220223</enddate><creator>Li, Xintong</creator><creator>Liu, Zhida</creator><creator>Liu, Yihan</creator><creator>Karki, Suyogya</creator><creator>Li, Xiaoqin</creator><creator>Akinwande, Deji</creator><creator>Incorvia, Jean Anne C</creator><scope>GOX</scope></search><sort><creationdate>20220223</creationdate><title>All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors</title><author>Li, Xintong ; Liu, Zhida ; Liu, Yihan ; Karki, Suyogya ; Li, Xiaoqin ; Akinwande, Deji ; Incorvia, Jean Anne C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a674-d0c5d2c63e82fa1c299c1738ebe2799ae04a076593d31ff511979852e2a8ff443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Physics - Mesoscale and Nanoscale Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Li, Xintong</creatorcontrib><creatorcontrib>Liu, Zhida</creatorcontrib><creatorcontrib>Liu, Yihan</creatorcontrib><creatorcontrib>Karki, Suyogya</creatorcontrib><creatorcontrib>Li, Xiaoqin</creatorcontrib><creatorcontrib>Akinwande, Deji</creatorcontrib><creatorcontrib>Incorvia, Jean Anne C</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Xintong</au><au>Liu, Zhida</au><au>Liu, Yihan</au><au>Karki, Suyogya</au><au>Li, Xiaoqin</au><au>Akinwande, Deji</au><au>Incorvia, Jean Anne C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors</atitle><date>2022-02-23</date><risdate>2022</risdate><abstract>Heavy metal-based two-dimensional van der Waals materials have a large,
coupled spin and valley Hall effect (SVHE) that has potential use in
spintronics and valleytronics. Optical measurements of the SVHE have largely
been performed below 30 K and understanding of the SVHE-induced spin/valley
polarizations that can be electrically generated is limited. Here, we study the
SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR)
measurements show the spatial distribution of the SVHE at different
temperatures, its persistence up to 160 K, and that it can be electrically
modulated via gate and drain bias. A spin/valley drift and diffusion model
together with reflection spectra data is used to interpret the KR data and
predict a lower-bound spin/valley lifetime of 4.1 ns below 90 K and 0.26 ns at
160 K. The excess spin and valley per unit length along the edge is calculated
to be 109 per micron at 45 K, which corresponds to a spin/valley polarization
on the edge of 6%. These results are important steps towards practical use of
the SVHE.</abstract><doi>10.48550/arxiv.2202.11774</doi><oa>free_for_read</oa></addata></record> |
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subjects | Physics - Mesoscale and Nanoscale Physics |
title | All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors |
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