Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal
Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a m...
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| creator | Liu, Jinming Fan, Yihong Zhang, Delin Benally, Onri J Bainsla, Lakhan Peterson, Thomas Wang, Jian-Ping |
| description | Topological semimetals (TSs) are promising candidates for low-power
spin-orbit torque (SOT) devices due to their large charge-to-spin conversion
efficiency. Here, we investigated the charge-to-spin conversion efficiency of
amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a
magnetron sputtering method at room temperature. The charge-to-spin ratio of
PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic
resonance (ST-FMR) technique. This ratio can further increase to 0.14 by
inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease
(Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work
proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with
dopants. |
| doi_str_mv | 10.48550/arxiv.2202.01384 |
| format | Article |
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spin-orbit torque (SOT) devices due to their large charge-to-spin conversion
efficiency. Here, we investigated the charge-to-spin conversion efficiency of
amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a
magnetron sputtering method at room temperature. The charge-to-spin ratio of
PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic
resonance (ST-FMR) technique. This ratio can further increase to 0.14 by
inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease
(Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work
proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with
dopants.</description><identifier>DOI: 10.48550/arxiv.2202.01384</identifier><language>eng</language><subject>Physics - Materials Science</subject><creationdate>2022-02</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2202.01384$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.2202.01384$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Jinming</creatorcontrib><creatorcontrib>Fan, Yihong</creatorcontrib><creatorcontrib>Zhang, Delin</creatorcontrib><creatorcontrib>Benally, Onri J</creatorcontrib><creatorcontrib>Bainsla, Lakhan</creatorcontrib><creatorcontrib>Peterson, Thomas</creatorcontrib><creatorcontrib>Wang, Jian-Ping</creatorcontrib><title>Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal</title><description>Topological semimetals (TSs) are promising candidates for low-power
spin-orbit torque (SOT) devices due to their large charge-to-spin conversion
efficiency. Here, we investigated the charge-to-spin conversion efficiency of
amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a
magnetron sputtering method at room temperature. The charge-to-spin ratio of
PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic
resonance (ST-FMR) technique. This ratio can further increase to 0.14 by
inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease
(Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work
proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with
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spin-orbit torque (SOT) devices due to their large charge-to-spin conversion
efficiency. Here, we investigated the charge-to-spin conversion efficiency of
amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a
magnetron sputtering method at room temperature. The charge-to-spin ratio of
PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic
resonance (ST-FMR) technique. This ratio can further increase to 0.14 by
inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease
(Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work
proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with
dopants.</abstract><doi>10.48550/arxiv.2202.01384</doi><oa>free_for_read</oa></addata></record> |
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| title | Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal |
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