High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources

We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to \(1.9*10^{12} A/m^2Sr^2\) with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV i...

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Veröffentlicht in:	arXiv.org 2022-01
Hauptverfasser:	Leedle, Kenneth J, Niedermayer, Uwe, Skär, Eric, Urbanek, Karel, Yu, Miao, Broaddus, Payton, Solgaard, Olav, Byer, Robert L
Format:	Artikel
Sprache:	eng
Schlagworte:	Brightness Charge simulation Electron diffraction Electron sources Lenses Physics - Accelerator Physics Silicon carbide Space charge Submerging
Online-Zugang:	Volltext
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