High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources
We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to \(1.9*10^{12} A/m^2Sr^2\) with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV i...
Gespeichert in:
| Veröffentlicht in: | arXiv.org 2022-01 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | arXiv.org |
| container_volume | |
| creator | Leedle, Kenneth J Niedermayer, Uwe Skär, Eric Urbanek, Karel Yu, Miao Broaddus, Payton Solgaard, Olav Byer, Robert L |
| description | We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to \(1.9*10^{12} A/m^2Sr^2\) with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immersion lens electron source and a 57 keV immersion lens electron source with a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm used in DC electron sources. The brightness of the electron sources is measured alongside start-to-end simulations including space charge effects. These sources are suitable for dielectric laser accelerator experiments, ultrafast electron diffraction, and other applications where a compact high brightness electron source is required. |
| doi_str_mv | 10.48550/arxiv.2201.10583 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_2201_10583</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2623197862</sourcerecordid><originalsourceid>FETCH-LOGICAL-a522-3d7e91d82ddc6e362bf19365c39935c4796265d3aca3e8c0fb9bbba0cd9cb94c3</originalsourceid><addsrcrecordid>eNotj01Lw0AURQdBsNT-AFcGXCfOvJeZZJZSaloIuGhdh_mKTknSOpOK_nvT1tWFw-VyDyEPjGZ5yTl9VuHHf2cAlGWM8hJvyAwQWVrmAHdkEeOeUgqiAM5xRqq1__hMqqCsd8OYbH3nzWFIlipob12y6XsXop9I7YaYvHdjUK2KY7LqnBnDxLeHUzAu3pPbVnXRLf5zTnavq91yndZv1Wb5UqeKA6RoCyeZLcFaIxwK0C2TKLhBKZGbvJACBLeojEJXGtpqqbVW1FhptMwNzsnjdfZi2RyD71X4bc62zcV2ajxdG8dw-Dq5ODb76eEwfWpAADJZlFP8AZhnV68</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2623197862</pqid></control><display><type>article</type><title>High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Leedle, Kenneth J ; Niedermayer, Uwe ; Skär, Eric ; Urbanek, Karel ; Yu, Miao ; Broaddus, Payton ; Solgaard, Olav ; Byer, Robert L</creator><creatorcontrib>Leedle, Kenneth J ; Niedermayer, Uwe ; Skär, Eric ; Urbanek, Karel ; Yu, Miao ; Broaddus, Payton ; Solgaard, Olav ; Byer, Robert L</creatorcontrib><description>We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to \(1.9*10^{12} A/m^2Sr^2\) with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immersion lens electron source and a 57 keV immersion lens electron source with a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm used in DC electron sources. The brightness of the electron sources is measured alongside start-to-end simulations including space charge effects. These sources are suitable for dielectric laser accelerator experiments, ultrafast electron diffraction, and other applications where a compact high brightness electron source is required.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2201.10583</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Brightness ; Charge simulation ; Electron diffraction ; Electron sources ; Lenses ; Physics - Accelerator Physics ; Silicon carbide ; Space charge ; Submerging</subject><ispartof>arXiv.org, 2022-01</ispartof><rights>2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://creativecommons.org/licenses/by/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27925</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.2201.10583$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1063/5.0086321$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Leedle, Kenneth J</creatorcontrib><creatorcontrib>Niedermayer, Uwe</creatorcontrib><creatorcontrib>Skär, Eric</creatorcontrib><creatorcontrib>Urbanek, Karel</creatorcontrib><creatorcontrib>Yu, Miao</creatorcontrib><creatorcontrib>Broaddus, Payton</creatorcontrib><creatorcontrib>Solgaard, Olav</creatorcontrib><creatorcontrib>Byer, Robert L</creatorcontrib><title>High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources</title><title>arXiv.org</title><description>We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to \(1.9*10^{12} A/m^2Sr^2\) with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immersion lens electron source and a 57 keV immersion lens electron source with a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm used in DC electron sources. The brightness of the electron sources is measured alongside start-to-end simulations including space charge effects. These sources are suitable for dielectric laser accelerator experiments, ultrafast electron diffraction, and other applications where a compact high brightness electron source is required.</description><subject>Brightness</subject><subject>Charge simulation</subject><subject>Electron diffraction</subject><subject>Electron sources</subject><subject>Lenses</subject><subject>Physics - Accelerator Physics</subject><subject>Silicon carbide</subject><subject>Space charge</subject><subject>Submerging</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj01Lw0AURQdBsNT-AFcGXCfOvJeZZJZSaloIuGhdh_mKTknSOpOK_nvT1tWFw-VyDyEPjGZ5yTl9VuHHf2cAlGWM8hJvyAwQWVrmAHdkEeOeUgqiAM5xRqq1__hMqqCsd8OYbH3nzWFIlipob12y6XsXop9I7YaYvHdjUK2KY7LqnBnDxLeHUzAu3pPbVnXRLf5zTnavq91yndZv1Wb5UqeKA6RoCyeZLcFaIxwK0C2TKLhBKZGbvJACBLeojEJXGtpqqbVW1FhptMwNzsnjdfZi2RyD71X4bc62zcV2ajxdG8dw-Dq5ODb76eEwfWpAADJZlFP8AZhnV68</recordid><startdate>20220125</startdate><enddate>20220125</enddate><creator>Leedle, Kenneth J</creator><creator>Niedermayer, Uwe</creator><creator>Skär, Eric</creator><creator>Urbanek, Karel</creator><creator>Yu, Miao</creator><creator>Broaddus, Payton</creator><creator>Solgaard, Olav</creator><creator>Byer, Robert L</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20220125</creationdate><title>High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources</title><author>Leedle, Kenneth J ; Niedermayer, Uwe ; Skär, Eric ; Urbanek, Karel ; Yu, Miao ; Broaddus, Payton ; Solgaard, Olav ; Byer, Robert L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a522-3d7e91d82ddc6e362bf19365c39935c4796265d3aca3e8c0fb9bbba0cd9cb94c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Brightness</topic><topic>Charge simulation</topic><topic>Electron diffraction</topic><topic>Electron sources</topic><topic>Lenses</topic><topic>Physics - Accelerator Physics</topic><topic>Silicon carbide</topic><topic>Space charge</topic><topic>Submerging</topic><toplevel>online_resources</toplevel><creatorcontrib>Leedle, Kenneth J</creatorcontrib><creatorcontrib>Niedermayer, Uwe</creatorcontrib><creatorcontrib>Skär, Eric</creatorcontrib><creatorcontrib>Urbanek, Karel</creatorcontrib><creatorcontrib>Yu, Miao</creatorcontrib><creatorcontrib>Broaddus, Payton</creatorcontrib><creatorcontrib>Solgaard, Olav</creatorcontrib><creatorcontrib>Byer, Robert L</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Leedle, Kenneth J</au><au>Niedermayer, Uwe</au><au>Skär, Eric</au><au>Urbanek, Karel</au><au>Yu, Miao</au><au>Broaddus, Payton</au><au>Solgaard, Olav</au><au>Byer, Robert L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources</atitle><jtitle>arXiv.org</jtitle><date>2022-01-25</date><risdate>2022</risdate><eissn>2331-8422</eissn><abstract>We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to \(1.9*10^{12} A/m^2Sr^2\) with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immersion lens electron source and a 57 keV immersion lens electron source with a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm used in DC electron sources. The brightness of the electron sources is measured alongside start-to-end simulations including space charge effects. These sources are suitable for dielectric laser accelerator experiments, ultrafast electron diffraction, and other applications where a compact high brightness electron source is required.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.2201.10583</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | EISSN: 2331-8422 |
| ispartof | arXiv.org, 2022-01 |
| issn | 2331-8422 |
| language | eng |
| recordid | cdi_arxiv_primary_2201_10583 |
| source | arXiv.org; Free E- Journals |
| subjects | Brightness Charge simulation Electron diffraction Electron sources Lenses Physics - Accelerator Physics Silicon carbide Space charge Submerging |
| title | High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T06%3A17%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20Gradient%20Silicon%20Carbide%20Immersion%20Lens%20Ultrafast%20Electron%20Sources&rft.jtitle=arXiv.org&rft.au=Leedle,%20Kenneth%20J&rft.date=2022-01-25&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.2201.10583&rft_dat=%3Cproquest_arxiv%3E2623197862%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2623197862&rft_id=info:pmid/&rfr_iscdi=true |