Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement

Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are presented and discussed. Gate-all-around nanosheet device structures with a total of three sacrificial SiGe sheets were...

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Veröffentlicht in:	arXiv.org 2022-04
Hauptverfasser:	Schmidt, Daniel, Cepler, Aron, Durfee, Curtis, Pancharatnam, Shanti, Frougier, Julien, Breton, Mary, Greene, Andrew, Klare, Mark, Roy Koret, Turovets, Igor
Format:	Artikel
Sprache:	eng
Schlagworte:	Algorithms Germanium Image transmission Indentation Interferometry Machine learning Mathematical models Nanosheets Parameters Physics - Applied Physics Process controls Silicon germanides Spectra X-ray fluorescence
Online-Zugang:	Volltext
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