A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency combs, and microwave-optical transducers. Yet to date, LiNbO3...
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| creator | Churaev, Mikhail Rui Ning Wang Snigirev, Viacheslav Riedhauser, Annina Blésin, Terence Möhl, Charles Anderson, Miles A Anat Siddharth Popoff, Youri Caimi, Daniele Hönl, Simon Riemensberger, Johann Liu, Junqiu Seidler, Paul Kippenberg, Tobias J |
| description | The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency combs, and microwave-optical transducers. Yet to date, LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using non-standard etching techniques that lack the reproducibility routinely achieved in silicon photonics. Widespread future application of thin-film LiNbO3 requires a reliable and scalable solution using standard processing and precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform that overcomes the abovementioned challenges by employing wafer-scale bonding of thin-film LiNbO3 to planarized low-loss silicon nitride (Si3N4) photonic integrated circuits, a mature foundry-grade integrated photonic platform. The resulting devices combine the substantial Pockels effect of LiNbO3 with the scalability, high-yield, and complexity of the underlying Si3N4 PICs. Importantly, the platform maintains the low propagation loss ( |
| doi_str_mv | 10.48550/arxiv.2112.02018 |
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Yet to date, LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using non-standard etching techniques that lack the reproducibility routinely achieved in silicon photonics. Widespread future application of thin-film LiNbO3 requires a reliable and scalable solution using standard processing and precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform that overcomes the abovementioned challenges by employing wafer-scale bonding of thin-film LiNbO3 to planarized low-loss silicon nitride (Si3N4) photonic integrated circuits, a mature foundry-grade integrated photonic platform. The resulting devices combine the substantial Pockels effect of LiNbO3 with the scalability, high-yield, and complexity of the underlying Si3N4 PICs. Importantly, the platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si3N4 waveguides. We find that ten transitions between a mode confined in the Si3N4 PIC and the hybrid LiNbO\(_3\) mode produce less than 0.8 dB additional loss, corresponding to a loss per transition not exceeding 0.1 dB. These nearly lossless adiabatic transitions thus link the low-loss passive Si3N4 photonic structures with electro-optic components. We demonstrate high-Q microresonators, optical splitters, electrically tunable photonic dimers, electro-optic frequency combs, and carrier-envelope phase detection of a femtosecond laser on the same platform, thus providing a reliable and foundry-ready solution to low-loss and complex LiNbO3 integrated photonic circuits.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2112.02018</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>CMOS ; Coupling ; Dimers ; Electric potential ; Integrated circuits ; Lithium niobates ; Microwave photonics ; Modulators ; Photonics ; Physical properties ; Physics - Applied Physics ; Physics - Optics ; Silicon nitride ; Voltage ; Wave propagation ; Waveguides</subject><ispartof>arXiv.org, 2022-09</ispartof><rights>2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://creativecommons.org/licenses/by/4.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,780,881,27902</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.2112.02018$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1038/s41467-023-39047-7$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Churaev, Mikhail</creatorcontrib><creatorcontrib>Rui Ning Wang</creatorcontrib><creatorcontrib>Snigirev, Viacheslav</creatorcontrib><creatorcontrib>Riedhauser, Annina</creatorcontrib><creatorcontrib>Blésin, Terence</creatorcontrib><creatorcontrib>Möhl, Charles</creatorcontrib><creatorcontrib>Anderson, Miles A</creatorcontrib><creatorcontrib>Anat Siddharth</creatorcontrib><creatorcontrib>Popoff, Youri</creatorcontrib><creatorcontrib>Caimi, Daniele</creatorcontrib><creatorcontrib>Hönl, Simon</creatorcontrib><creatorcontrib>Riemensberger, Johann</creatorcontrib><creatorcontrib>Liu, Junqiu</creatorcontrib><creatorcontrib>Seidler, Paul</creatorcontrib><creatorcontrib>Kippenberg, Tobias J</creatorcontrib><title>A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform</title><title>arXiv.org</title><description>The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency combs, and microwave-optical transducers. Yet to date, LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using non-standard etching techniques that lack the reproducibility routinely achieved in silicon photonics. Widespread future application of thin-film LiNbO3 requires a reliable and scalable solution using standard processing and precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform that overcomes the abovementioned challenges by employing wafer-scale bonding of thin-film LiNbO3 to planarized low-loss silicon nitride (Si3N4) photonic integrated circuits, a mature foundry-grade integrated photonic platform. The resulting devices combine the substantial Pockels effect of LiNbO3 with the scalability, high-yield, and complexity of the underlying Si3N4 PICs. Importantly, the platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si3N4 waveguides. We find that ten transitions between a mode confined in the Si3N4 PIC and the hybrid LiNbO\(_3\) mode produce less than 0.8 dB additional loss, corresponding to a loss per transition not exceeding 0.1 dB. These nearly lossless adiabatic transitions thus link the low-loss passive Si3N4 photonic structures with electro-optic components. We demonstrate high-Q microresonators, optical splitters, electrically tunable photonic dimers, electro-optic frequency combs, and carrier-envelope phase detection of a femtosecond laser on the same platform, thus providing a reliable and foundry-ready solution to low-loss and complex LiNbO3 integrated photonic circuits.</description><subject>CMOS</subject><subject>Coupling</subject><subject>Dimers</subject><subject>Electric potential</subject><subject>Integrated circuits</subject><subject>Lithium niobates</subject><subject>Microwave photonics</subject><subject>Modulators</subject><subject>Photonics</subject><subject>Physical properties</subject><subject>Physics - Applied Physics</subject><subject>Physics - Optics</subject><subject>Silicon nitride</subject><subject>Voltage</subject><subject>Wave propagation</subject><subject>Waveguides</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotj8tqwzAUREWh0JDmA7qqoWu7Vy9HXobQRyBQCtkbSb5OFBzJleXS_H3dpKuBwzDMIeSBQiGUlPCs44_7LhilrAAGVN2QGeOc5kowdkcWw3AEAFYumZR8Rj5X2QETxrBHj2EcunPmfMJ91AmbrHPp4MZT5l0wE8iDzwfXORv8hFJ0DWb9IaTgnc36Tqc2xNM9uW11N-DiP-dk9_qyW7_n24-3zXq1zXUlVd60SjKU2kitjNBlqa2i1qqKcloaMFUrKisaNMoYoIgNcmG5BkGFNQI4n5PH6-zFt-6jO-l4rv-864v31Hi6NvoYvkYcUn0MY_TTp5qVsATFpVT8FxxRXOc</recordid><startdate>20220912</startdate><enddate>20220912</enddate><creator>Churaev, Mikhail</creator><creator>Rui Ning Wang</creator><creator>Snigirev, Viacheslav</creator><creator>Riedhauser, Annina</creator><creator>Blésin, Terence</creator><creator>Möhl, Charles</creator><creator>Anderson, Miles A</creator><creator>Anat Siddharth</creator><creator>Popoff, Youri</creator><creator>Caimi, Daniele</creator><creator>Hönl, Simon</creator><creator>Riemensberger, Johann</creator><creator>Liu, Junqiu</creator><creator>Seidler, Paul</creator><creator>Kippenberg, Tobias J</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20220912</creationdate><title>A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform</title><author>Churaev, Mikhail ; Rui Ning Wang ; Snigirev, Viacheslav ; Riedhauser, Annina ; Blésin, Terence ; Möhl, Charles ; Anderson, Miles A ; Anat Siddharth ; Popoff, Youri ; Caimi, Daniele ; Hönl, Simon ; Riemensberger, Johann ; Liu, Junqiu ; Seidler, Paul ; Kippenberg, Tobias J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a958-df852e5ab5a8b4a66ac81cc891316b0b9f49c4deb8bb01eede34c3a0414cb4033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>CMOS</topic><topic>Coupling</topic><topic>Dimers</topic><topic>Electric potential</topic><topic>Integrated circuits</topic><topic>Lithium niobates</topic><topic>Microwave photonics</topic><topic>Modulators</topic><topic>Photonics</topic><topic>Physical properties</topic><topic>Physics - Applied Physics</topic><topic>Physics - Optics</topic><topic>Silicon nitride</topic><topic>Voltage</topic><topic>Wave propagation</topic><topic>Waveguides</topic><toplevel>online_resources</toplevel><creatorcontrib>Churaev, Mikhail</creatorcontrib><creatorcontrib>Rui Ning Wang</creatorcontrib><creatorcontrib>Snigirev, Viacheslav</creatorcontrib><creatorcontrib>Riedhauser, Annina</creatorcontrib><creatorcontrib>Blésin, Terence</creatorcontrib><creatorcontrib>Möhl, Charles</creatorcontrib><creatorcontrib>Anderson, Miles A</creatorcontrib><creatorcontrib>Anat Siddharth</creatorcontrib><creatorcontrib>Popoff, Youri</creatorcontrib><creatorcontrib>Caimi, Daniele</creatorcontrib><creatorcontrib>Hönl, Simon</creatorcontrib><creatorcontrib>Riemensberger, Johann</creatorcontrib><creatorcontrib>Liu, Junqiu</creatorcontrib><creatorcontrib>Seidler, Paul</creatorcontrib><creatorcontrib>Kippenberg, Tobias J</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Churaev, Mikhail</au><au>Rui Ning Wang</au><au>Snigirev, Viacheslav</au><au>Riedhauser, Annina</au><au>Blésin, Terence</au><au>Möhl, Charles</au><au>Anderson, Miles A</au><au>Anat Siddharth</au><au>Popoff, Youri</au><au>Caimi, Daniele</au><au>Hönl, Simon</au><au>Riemensberger, Johann</au><au>Liu, Junqiu</au><au>Seidler, Paul</au><au>Kippenberg, Tobias J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform</atitle><jtitle>arXiv.org</jtitle><date>2022-09-12</date><risdate>2022</risdate><eissn>2331-8422</eissn><abstract>The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency combs, and microwave-optical transducers. Yet to date, LiNbO3 photonic integrated circuits (PICs) have mostly been fabricated using non-standard etching techniques that lack the reproducibility routinely achieved in silicon photonics. Widespread future application of thin-film LiNbO3 requires a reliable and scalable solution using standard processing and precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform that overcomes the abovementioned challenges by employing wafer-scale bonding of thin-film LiNbO3 to planarized low-loss silicon nitride (Si3N4) photonic integrated circuits, a mature foundry-grade integrated photonic platform. The resulting devices combine the substantial Pockels effect of LiNbO3 with the scalability, high-yield, and complexity of the underlying Si3N4 PICs. Importantly, the platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si3N4 waveguides. We find that ten transitions between a mode confined in the Si3N4 PIC and the hybrid LiNbO\(_3\) mode produce less than 0.8 dB additional loss, corresponding to a loss per transition not exceeding 0.1 dB. These nearly lossless adiabatic transitions thus link the low-loss passive Si3N4 photonic structures with electro-optic components. We demonstrate high-Q microresonators, optical splitters, electrically tunable photonic dimers, electro-optic frequency combs, and carrier-envelope phase detection of a femtosecond laser on the same platform, thus providing a reliable and foundry-ready solution to low-loss and complex LiNbO3 integrated photonic circuits.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.2112.02018</doi><oa>free_for_read</oa></addata></record> |
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| subjects | CMOS Coupling Dimers Electric potential Integrated circuits Lithium niobates Microwave photonics Modulators Photonics Physical properties Physics - Applied Physics Physics - Optics Silicon nitride Voltage Wave propagation Waveguides |
| title | A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform |
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