Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report o...
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| creator | Liu, N Schreyeck, S Fijalkowski, K M Kamp, M Brunner, K Gould, C Molenkamp, L W |
| description | MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE. |
| doi_str_mv | 10.48550/arxiv.2111.13960 |
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However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. 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Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.</description><subject>Antiferromagnetism</subject><subject>Crystal defects</subject><subject>Epitaxial growth</subject><subject>Magnetic measurement</subject><subject>Magnetic properties</subject><subject>Molecular beam epitaxy</subject><subject>Neel temperature</subject><subject>Physics - Materials Science</subject><subject>Silicon substrates</subject><subject>Stoichiometry</subject><subject>Topological insulators</subject><subject>Transport properties</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj81OwkAURicmJhLkAVw5iRtdFOe_wxKJqAnGhd03d9pbMqSdwWlReHsRXH2bk5PvEHLD2VRZrdkjpL3_ngrO-ZTLmWEXZCSk5JlVQlyRSd9vGGPC5EJrOSLFPAy-wZRiB-uAg69oTDUm6gN9D09eFKho49uup-sUfwKNgX76-6P9gboD7WKL1a6FRB1CR3HrB9gfrsllA22Pk_8dk2L5XCxes9XHy9tivspAC50B8lqBZWBAOWEdcOtU7nhdibxGpwUwjsrAzAJWohG1kY1FiVXNjWqck2Nye9aekstt8h2kQ_mXXp7Sj8Tdmdim-LXDfig3cZfC8VMpDFMmZzLX8hdTC1vW</recordid><startdate>20211127</startdate><enddate>20211127</enddate><creator>Liu, N</creator><creator>Schreyeck, S</creator><creator>Fijalkowski, K M</creator><creator>Kamp, M</creator><creator>Brunner, K</creator><creator>Gould, C</creator><creator>Molenkamp, L W</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20211127</creationdate><title>Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy</title><author>Liu, N ; 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However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.2111.13960</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Antiferromagnetism Crystal defects Epitaxial growth Magnetic measurement Magnetic properties Molecular beam epitaxy Neel temperature Physics - Materials Science Silicon substrates Stoichiometry Topological insulators Transport properties |
| title | Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy |
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