Raman and first-principles study of the pressure induced Mott-insulator to metal transition in bulk FePS$_3

Recently discovered class of 2D materials based on transition metal phosphorous trichalcogenides exhibit antiferromagnetic ground state, with potential applications in spintronics. Amongst them, FePS$ _{3} $ is a Mott insulator with a band gap of $\sim$ 1.5 eV. This study using Raman spectroscopy al...

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Hauptverfasser:	Das, Subhadip, Chaturvedi, Shashank, Tripathy, Debashis, Grover, Shivani, Singh, Rajendra, Muthu, D. V. S, Sampath, S, Waghmare, U. V, Sood, A. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science Physics - Strongly Correlated Electrons
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