Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visibl...

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Veröffentlicht in:	arXiv.org 2021-07
Hauptverfasser:	Peña Román, Ricardo Javier, Fábio J R Costa Costa, Zobelli, Alberto, Elias, Christine, Valvin, Pierre, Cassabois, Guillaume, Gil, Bernard, Summerfield, Alex, Cheng, Tin S, Mellor, Christopher J, Beton, Peter H, Novikov, Sergei V, Zagonel, Luiz F
Format:	Artikel
Sprache:	eng
Schlagworte:	Binding energy Boron nitride Carbon Cathodoluminescence Emitters Epitaxial growth Excitons Heterostructures Light sources Low temperature Monolayers Optical properties Photoluminescence Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Point defects Pyrolytic graphite Room temperature Scanning tunneling microscopy Spectral emittance Spectroscopy Spectrum analysis Ultraviolet radiation Wide bandgap semiconductors
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