Exciton-exciton and exciton-charge carrier interaction and the exciton collisional broadening in GaAs/AlGaAs quantum wells
Wave functions of heavy-hole excitons in GaAs/Al\(_{0.3}\)Ga\(_{0.7}\)As square quantum wells (QWs) of various widths are calculated by the direct numerical solution of a three-dimensional Schr\"odinger equation using a finite-difference scheme. These wave functions are then used to determine t...
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| description | Wave functions of heavy-hole excitons in GaAs/Al\(_{0.3}\)Ga\(_{0.7}\)As square quantum wells (QWs) of various widths are calculated by the direct numerical solution of a three-dimensional Schr\"odinger equation using a finite-difference scheme. These wave functions are then used to determine the exciton-exciton, exciton-electron and exciton-hole fermion exchange constants in a wide range of QW widths (5-150 nm). Additionally, the spin-dependent matrix elements of elastic exciton-exciton, exciton-electron and exciton-hole scattering are calculated. From these matrix elements, the collisional broadening of the exciton resonance is obtained within the Born approximation as a function of the areal density of excitons, electrons and holes respectively for QW widths of 5, 15, 30 and 50 nm. The obtained numerical results are compared with other theoretical works. |
| doi_str_mv | 10.48550/arxiv.2107.07273 |
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These wave functions are then used to determine the exciton-exciton, exciton-electron and exciton-hole fermion exchange constants in a wide range of QW widths (5-150 nm). Additionally, the spin-dependent matrix elements of elastic exciton-exciton, exciton-electron and exciton-hole scattering are calculated. From these matrix elements, the collisional broadening of the exciton resonance is obtained within the Born approximation as a function of the areal density of excitons, electrons and holes respectively for QW widths of 5, 15, 30 and 50 nm. 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These wave functions are then used to determine the exciton-exciton, exciton-electron and exciton-hole fermion exchange constants in a wide range of QW widths (5-150 nm). Additionally, the spin-dependent matrix elements of elastic exciton-exciton, exciton-electron and exciton-hole scattering are calculated. From these matrix elements, the collisional broadening of the exciton resonance is obtained within the Born approximation as a function of the areal density of excitons, electrons and holes respectively for QW widths of 5, 15, 30 and 50 nm. The obtained numerical results are compared with other theoretical works.</description><subject>Born approximation</subject><subject>Collisional broadening</subject><subject>Current carriers</subject><subject>Elastic scattering</subject><subject>Excitons</subject><subject>Fermions</subject><subject>Finite difference method</subject><subject>Gallium arsenide</subject><subject>Mathematical analysis</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Quantum wells</subject><subject>Wave functions</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNo1kNFqwjAUhsNgMHE-wK4W2HU1PWma9lLEuYGwG-_LaZpoJLaatJvb0y9Td_Ufcr4T-D9CnlI2zQoh2Az92X5OIWVyyiRIfkdGwHmaFBnAA5mEsGeMQS5BCD4iP8uzsn3XJvqaFNuG3uZE7dBvNVXovdWe2rbXHlVvb1i_0_8oVZ1zNsQNOlr7Dhvd2nYbT-gK52E2d39BTwO2_XCgX9q58EjuDbqgJ7cck83rcrN4S9Yfq_fFfJ2gAJ6UDICXpondCpNLKbK6zmOBgqPBIlfMNCrNgdcyy0zJTB1fpExzI4wowCg-Js_Xby9iqqO3B_Tf1Z-g6iIoEi9X4ui706BDX-27wccmoYqSIC0Zi9Qvc21qMQ</recordid><startdate>20210715</startdate><enddate>20210715</enddate><creator>Gribakin, B F</creator><creator>Khramtsov, E S</creator><creator>Trifonov, A V</creator><creator>Ignatiev, I V</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20210715</creationdate><title>Exciton-exciton and exciton-charge carrier interaction and the exciton collisional broadening in GaAs/AlGaAs quantum wells</title><author>Gribakin, B F ; Khramtsov, E S ; Trifonov, A V ; Ignatiev, I V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a523-902239fd8558f67754bb600283afa86c0fdc1623b744f90fbc0f7716f5f582fc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Born approximation</topic><topic>Collisional broadening</topic><topic>Current carriers</topic><topic>Elastic scattering</topic><topic>Excitons</topic><topic>Fermions</topic><topic>Finite difference method</topic><topic>Gallium arsenide</topic><topic>Mathematical analysis</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Quantum wells</topic><topic>Wave functions</topic><toplevel>online_resources</toplevel><creatorcontrib>Gribakin, B F</creatorcontrib><creatorcontrib>Khramtsov, E S</creatorcontrib><creatorcontrib>Trifonov, A V</creatorcontrib><creatorcontrib>Ignatiev, I V</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gribakin, B F</au><au>Khramtsov, E S</au><au>Trifonov, A V</au><au>Ignatiev, I V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exciton-exciton and exciton-charge carrier interaction and the exciton collisional broadening in GaAs/AlGaAs quantum wells</atitle><jtitle>arXiv.org</jtitle><date>2021-07-15</date><risdate>2021</risdate><eissn>2331-8422</eissn><abstract>Wave functions of heavy-hole excitons in GaAs/Al\(_{0.3}\)Ga\(_{0.7}\)As square quantum wells (QWs) of various widths are calculated by the direct numerical solution of a three-dimensional Schr\"odinger equation using a finite-difference scheme. 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| subjects | Born approximation Collisional broadening Current carriers Elastic scattering Excitons Fermions Finite difference method Gallium arsenide Mathematical analysis Physics - Mesoscale and Nanoscale Physics Quantum wells Wave functions |
| title | Exciton-exciton and exciton-charge carrier interaction and the exciton collisional broadening in GaAs/AlGaAs quantum wells |
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