Tunable spin-orbit coupling in two-dimensional InSe

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer \(\gamma\)-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially,...

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Veröffentlicht in:	arXiv.org 2021-06
Hauptverfasser:	Ceferino, A, Magorrian, S J, Zólyomi, V, Bandurin, D A, Geim, A K, Patanè, A, Kovalyuk, Z D, Kudrynskyi, Z R, Grigorieva, I V, Fal'ko, V I
Format:	Artikel
Sprache:	eng
Schlagworte:	Conduction bands Density functional theory Electric fields Electron spin Field effect transistors Multilayers Physics - Mesoscale and Nanoscale Physics Semiconductor devices Spin-orbit interactions Thickness
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