Quantum Capacitance Induced Non-Local Electrostatic Gating Effect in Graphene

Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability. However, remote control of a FET device through a gate electrode pl...

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Bibliographische Detailangaben

Hauptverfasser:	Deng, Aolin, Hu, Cheng, Shen, Peiyue, Luo, Xingdong, Chen, Jiajun, Lyu, Bosai, Watanabe, Kenji, Taniguchi, Takashi, Liang, Qi, Ma, Jie, Shi, Zhiwen
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science Physics - Mesoscale and Nanoscale Physics
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